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pro vyhledávání: '"Dhariwal, A"'
Autor:
S.R. Dhariwal, Jasa Ram
Publikováno v:
Solid State Communications. 142:276-280
The paper describes the possibility of designing matched interacting semiconductor quantum wells. It is shown that for a given eigenstate of a quantum well (QW), it is always possible to find another QW in such a way that the coupling leaves the orig
Publikováno v:
In Solid State Communications October 2012 152(20):1912-1916
Autor:
B.M. Deoraj, S.R. Dhariwal
Publikováno v:
Solid State Communications. 79:521-524
A theoretical derivation is given to the empirical formula δn(t) = δn(0)K(vct)−1+α exp [−(t/τeff)α] for dispersive relaxation of photoconductivity and photoluminescence in amorphous semiconductors of which the power law t−1+α also forms a
Autor:
Dhariwal, S.R., Ram, Jasa
Publikováno v:
In Solid State Communications 2007 142(5):276-280
Autor:
Dhariwal, Monika1, Maitra, T.1, Singh, Ishwar1, Koley, S.2, Taraphder, A.2,3 arghya@phy.iitkgp.ernet.in
Publikováno v:
Solid State Communications. Oct2012, Vol. 152 Issue 20, p1912-1916. 5p.
Autor:
S.R. Dhariwal, D.R. Mehrotra
Publikováno v:
Solid State Communications. 67:1007-1010
An interpolation formula for the life-time of minority carriers in terms of the trap size, r 0 , has been obtained. The recombination limited life-time (for r 0 ≪ λ , λ being the mean free path) and the diffusion limited life-time (for r 0 ≪ λ
Akademický článek
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Autor:
Dhariwal, S.R., Mehrotra, D.R.
Publikováno v:
In Solid State Communications 1988 67(10):1007-1010