Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Golubev, A."'
Autor:
A.Ju. Safonov, Petr G. Sennikov, Yu. N. Drozdov, Helge Riemann, M. N. Drozdov, Peter Becker, L. V. Gavrilenko, Hans-Joachim Pohl, D. A. Pryakhin, S. Valkiers, A.I. Glasunov, Sergey Golubev, Dmitry Mansfeld, Boris A. Andreev, Alexander Vodopyanov, O. N. Godisov, Nickolay Abrosimov, M. L. W. Thewalt, V. I. Shashkin
Publikováno v:
Solid State Communications. 152:455-457
A new approach for producing high-purity silicon with isotopic enrichment of 28Si isotope is reported. The methods of centrifugal enrichment were modified to obtain the initial gaseous silicon tetrafluoride with a record-breaking enrichment of 0.9999
Autor:
K R Allakhverdiev, E. Yu. Salaev, L.V. Golubev, S.S. Babaev, G. B. Abdullaev, L. K. Vodopyanov
Publikováno v:
Solid State Communications. 31:851-855
Raman-active lattice vibrational modes of GaTe have been investigated at 300°K in the frequency range 13–300 cm -1 . The spectra of the Bridgman grown crystals were excited with the 1.06 μm line of the continuously operated YAG : Nd 3+ laser. Fou
Autor:
L.V. Golubev, L. K. Vodopyanov, S.S. Babaev, K R Allakhverdiev, E. Yu. Salaev, G. B. Abdullaev, M.M. Tagyev
Publikováno v:
Solid State Communications. 34:125-128
The long-wavelength optical phonons of the layer GaSe1−xTex have been investigated at room temperature by means of Raman scattering spectroscopy. The spectra of the Bridgman grown crystals were excited with the 1,06 μm line of the continuously ope