Zobrazeno 1 - 3
of 3
pro vyhledávání: '"688"'
Autor:
John R. Tower, James Janesick
Publikováno v:
Sensors; Volume 16; Issue 5; Pages: 688
Sensors (Basel, Switzerland)
Sensors, Vol 16, Iss 5, p 688 (2016)
Sensors (Basel, Switzerland)
Sensors, Vol 16, Iss 5, p 688 (2016)
Fundamental limits for photon counting and photon energy measurement are reviewed for CCD and CMOS imagers. The challenges to extend photon counting into the visible/nIR wavelengths and achieve energy measurement in the UV with specific read noise re
Autor:
Yutaka Hirose, Shinzo Koyama, Motonori Ishii, Shigeru Saitou, Masato Takemoto, Yugo Nose, Akito Inoue, Yusuke Sakata, Yuki Sugiura, Tatsuya Kabe, Manabu Usuda, Shigetaka Kasuga, Mitsuyoshi Mori, Akihiro Odagawa, Tsuyoshi Tanaka
Publikováno v:
Sensors, Vol 18, Iss 11, p 3642 (2018)
We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 × 384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD with a s
Externí odkaz:
https://doaj.org/article/aa72a0acb4934787b5c434b5ed5ad7f3
Autor:
Mitsuyoshi Mori, Yutaka Hirose, Yusuke Sakata, Motonori Ishii, Tatsuya Kabe, Manabu Usuda, Shigetaka Kasuga, Shinzo Koyama, Takemoto Masato, Akihiro Odagawa, Tsuyoshi Tanaka, Yuki Sugiura, Yugo Nose, Akito Inoue, Shigeru Saitou
Publikováno v:
Sensors, Vol 18, Iss 11, p 3642 (2018)
Sensors
Volume 18
Issue 11
Sensors (Basel, Switzerland)
Sensors
Volume 18
Issue 11
Sensors (Basel, Switzerland)
We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 ×
384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD
384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD