Zobrazeno 1 - 2
of 2
pro vyhledávání: '"688"'
Autor:
Jaime Calvo-Gallego, Juan A. Delgado-Notario, Abdelaziz El Moussaouy, Jesus E. Velázquez-Pérez, Kristel Fobelets, Yahya Moubarak Meziani, Miguel Ferrando-Bataller
Publikováno v:
Sensors, Vol 21, Iss 688, p 688 (2021)
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
Sensors (Basel, Switzerland)
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
Sensors (Basel, Switzerland)
[EN] This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and
Publikováno v:
Sensors, Vol 18, Iss 3, p 688 (2018)
Sensors (Basel, Switzerland)
Sensors; Volume 18; Issue 3; Pages: 688
Sensors (Basel, Switzerland)
Sensors; Volume 18; Issue 3; Pages: 688
Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transis