Zobrazeno 1 - 4
of 4
pro vyhledávání: '"688"'
Autor:
Jaime Calvo-Gallego, Juan A. Delgado-Notario, Abdelaziz El Moussaouy, Jesus E. Velázquez-Pérez, Kristel Fobelets, Yahya Moubarak Meziani, Miguel Ferrando-Bataller
Publikováno v:
Sensors, Vol 21, Iss 688, p 688 (2021)
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
Sensors (Basel, Switzerland)
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
Sensors (Basel, Switzerland)
[EN] This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and
Publikováno v:
Sensors, Vol 18, Iss 3, p 688 (2018)
Sensors (Basel, Switzerland)
Sensors; Volume 18; Issue 3; Pages: 688
Sensors (Basel, Switzerland)
Sensors; Volume 18; Issue 3; Pages: 688
Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transis
Autor:
John R. Tower, James Janesick
Publikováno v:
Sensors; Volume 16; Issue 5; Pages: 688
Sensors (Basel, Switzerland)
Sensors, Vol 16, Iss 5, p 688 (2016)
Sensors (Basel, Switzerland)
Sensors, Vol 16, Iss 5, p 688 (2016)
Fundamental limits for photon counting and photon energy measurement are reviewed for CCD and CMOS imagers. The challenges to extend photon counting into the visible/nIR wavelengths and achieve energy measurement in the UV with specific read noise re
Autor:
Mitsuyoshi Mori, Yutaka Hirose, Yusuke Sakata, Motonori Ishii, Tatsuya Kabe, Manabu Usuda, Shigetaka Kasuga, Shinzo Koyama, Takemoto Masato, Akihiro Odagawa, Tsuyoshi Tanaka, Yuki Sugiura, Yugo Nose, Akito Inoue, Shigeru Saitou
Publikováno v:
Sensors, Vol 18, Iss 11, p 3642 (2018)
Sensors
Volume 18
Issue 11
Sensors (Basel, Switzerland)
Sensors
Volume 18
Issue 11
Sensors (Basel, Switzerland)
We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 ×
384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD
384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD