Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Jaime Calvo-Gallego"'
Publikováno v:
Semiconductor Science and Technology. 26:095030
In this contribution, we present a detailed study of the analogue performance of deep submicron strained n-channel Si/SiGe (s-Si) MOSFETs. The study was carried out using a 2D device simulator based on the hydrodynamic model and the impedance field m