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Publikováno v:
Semiconductor Science and Technology. 30:024013
(Ga1−xInx)2O3 epitaxial layers have been grown on (100) β-Ga2O3 substrates by metal organic vapour phase epitaxy (MOVPE). The process parameters were tuned in order to obtain an In-poor (Ga1−xInx)2O3 alloy, limiting the In incorporation below 3%