Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Youguang Zhang"'
Autor:
Li Su1,2,3,4, Youguang Zhang1,2, Klein, Jacques-Olivier3,4, Yue Zhang1,2, Bournel, Arnaud3,4, Fert, Albert1,2,5, Weisheng Zhao1,2,3,4 weisheng.zhao@buaa.edu.cn
Publikováno v:
Scientific Reports. 10/9/2015, p1-11. 11p.
Autor:
Yue Zhang, Jiang Nan, Jingtong Hu, Weisheng Zhao, Zhenyi Zheng, Zhizhong Zhang, Dafiné Ravelosona, Nicolas Vernier, Xueying Zhang, Youguang Zhang
Publikováno v:
Scientific Reports
Racetrack memory (RM) has sparked enormous interest thanks to its outstanding potential for low-power, high-density and high-speed data storage. However, since it requires bi-directional domain wall (DW) shifting process for outputting data, the main
Autor:
Youguang Zhang, Weisheng Zhao, Xichao Zhang, Yangqi Huang, Yan Zhou, Weifeng Lv, Chentian Zheng, Wang Kang, Na Lei
Publikováno v:
Scientific Reports
Magnetic skyrmion, vortex-like swirling topologically stable spin configurations, is appealing as information carrier for future nanoelectronics, owing to the stability, small size and extremely low driving current density. One of the most promising
Autor:
Kang L. Wang, Weisheng Zhao, Mengxing Wang, Youguang Zhang, Lang Zeng, Jiaqi Zhou, Jiang Nan, Qianfan Zhang, Ali Hallal, Hongxin Yang, Shouzhong Peng, Mairbek Chshiev
Publikováno v:
Scientific Reports
Scientific Reports, 2015, 5 (1), pp.18173. ⟨10.1038/srep18173⟩
Scientific Reports, Nature Publishing Group, 2015, 5 (1), pp.18173. ⟨10.1038/srep18173⟩
Scientific Reports, 2015, 5 (1), pp.18173. ⟨10.1038/srep18173⟩
Scientific Reports, Nature Publishing Group, 2015, 5 (1), pp.18173. ⟨10.1038/srep18173⟩
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which posses