Zobrazeno 71 - 80
of 252
pro vyhledávání: '"Denis V"'
Autor:
Seletskiy, Denis V., Kuno, Masaru K., Pauzauskie, Peter J., Püschel, Stefan, Kränkel, Christian, Tanaka, Hiroki
Publikováno v:
Proceedings of SPIE; March 2023, Vol. 12437 Issue: 1 p1243706-1243706-6
Publikováno v:
Proceedings of SPIE; March 2023, Vol. 12437 Issue: 1 p1243701-1243701-6
Autor:
Seletskiy, Denis V., Kuno, Masaru K., Pauzauskie, Peter J., Tsurimaki, Yoichiro, Yu, Renwen, Fan, Shanhui
Publikováno v:
Proceedings of SPIE; March 2023, Vol. 12437 Issue: 1 p1243702-1243702-5
Autor:
Awwal, Abdul A. S., Haefner, Constantin L., Denis, V., Néauport, J., Blanchot, N, Lacombe, C.
Publikováno v:
Proceedings of SPIE; March 2023, Vol. 12401 Issue: 1 p1240102-1240102-11
Publikováno v:
Proceedings of SPIE; Nov2014, p1-8, 8p
Autor:
Albrecht, Alexander R., Seletskiy, Denis V., Yi Wang, Cederberg, Jeffrey G., Sheik-Bahae, Mansoor
Publikováno v:
Proceedings of SPIE; Nov2014, p1-9, 9p
Autor:
Denis V. Babak, Vladimir I Emel'yanov
Publikováno v:
Proceedings of SPIE.
The theory of defect-strain instability with formation of periodic surface relief in semiconductors irradiated by ultrashort ((tau) p equals 10-13 s) laser pulse is developed. The period and time of formation of surface relief are calculated. Regimes
Autor:
Epstein, Richard I., Seletskiy, Denis V., Sheik-Bahae, Mansoor, Giannini, Nathan, Yang, Zhou, Albrecht, Alexander R., Sheik-Bahae, Mansoor
Publikováno v:
Proceedings of SPIE; February 2017, Vol. 10121 Issue: 1 p101210F-101210F-8, 910899p
Autor:
Epstein, Richard I., Seletskiy, Denis V., Sheik-Bahae, Mansoor, Radevici, Ivan, Tiira, Jonna, Oksanen, Jani
Publikováno v:
Proceedings of SPIE; February 2017, Vol. 10121 Issue: 1 p101210Q-101210Q-7, 910898p
Publikováno v:
Proceedings of SPIE; February 2017, Vol. 10121 Issue: 1 p101210O-101210O-1, 910892p