Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Martin Albrecht"'
Autor:
Nazir Jaber, Johannes Feldl, Julian Stoever, Klaus Irmscher, Martin Albrecht, Manfred Ramsteiner, Jutta Schwarzkopf
Publikováno v:
Physical Review Materials. 7
Autor:
Alexandra Papadogianni, Charlotte Wouters, Robert Schewski, Johannes Feldl, Jonas Lähnemann, Takahiro Nagata, Elias Kluth, Martin Feneberg, Rüdiger Goldhahn, Manfred Ramsteiner, Martin Albrecht, Oliver Bierwagen
Publikováno v:
Physical Review Materials. 6
Autor:
Kookrin Char, Wahib Aggoune, Martina Zupancic, Claudia Draxl, Toni Markurt, Martin Albrecht, Youjung Kim, Young Mo Kim
Publikováno v:
Physical Review Materials. 4
Epitaxial perovskite oxide interfaces with different symmetry of the epitaxial layers have attracted considerable attention due to the emergence of novel behaviors and phenomena. In this paper, we show by aberration-corrected transmission electron mi
Autor:
C. Wouters, Toni Markurt, Matthias Scheffler, A. Hassa, Marius Grundmann, H. von Wenckstern, Luca M. Ghiringhelli, Christopher Sutton, Martin Albrecht, Robert Schewski
Publikováno v:
Physical Review Materials. 4
We investigate the phase diagram of the heterostructural solid solution ${({\mathrm{In}}_{x}{\mathrm{Ga}}_{1\text{\ensuremath{-}}x})}_{2}{\mathrm{O}}_{3}$ both computationally, by combining cluster expansion and density functional theory, and experim
Autor:
Mariia Anikeeva, Marcin Siekacz, Tobias Schulz, Martin Albrecht, Toni Markurt, Liverios Lymperakis, P. Wolny
Publikováno v:
Physical Review Materials. 4
The incorporation of indium in GaN (0001) surfaces in dependence of strain is investigated by combining molecular-beam epitaxy (MBE) growth, quantitative transmission electron microscopy, and density-functional theory (DFT) calculations. Growth exper
Autor:
Bo Shen, M. Siekacz, Mariia Anikeeva, Martin Albrecht, Xianqiang Wang, Tobias Schulz, Zhizhong Chen, Liverios Lymperakis, Christoph Freysoldt, Caroline Chèze, Jörg Neugebauer, Xiantong Zheng
Publikováno v:
Physical Review Materials
Solid state devices based on InGaN\penalty1000-\hskip0ptalloys have revolutionized lighting applications and have resulted in huge energy savings. Here, the authors investigate the growth of single monolayer InGaN layers by well-designed growth exper