Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Annalisa Bonfiglio"'
Autor:
Annalisa Bonfiglio, Piero Cosseddu, Pier Carlo Ricci, Fabrizio Antonio Viola, Andrea Spanu, Stefano Lai
Publikováno v:
Organic electronics
48 (2017): 188–193. doi:10.1016/j.orgel.2017.06.010
info:cnr-pdr/source/autori:Spanu A.; Viola F.; Lai S.; Cosseddu P.; Ricci P.C.; Bonfiglio A./titolo:A reference-less pH sensor based on an organic field effect transistor with tunable sensitivity/doi:10.1016%2Fj.orgel.2017.06.010/rivista:Organic electronics (Print)/anno:2017/pagina_da:188/pagina_a:193/intervallo_pagine:188–193/volume:48
48 (2017): 188–193. doi:10.1016/j.orgel.2017.06.010
info:cnr-pdr/source/autori:Spanu A.; Viola F.; Lai S.; Cosseddu P.; Ricci P.C.; Bonfiglio A./titolo:A reference-less pH sensor based on an organic field effect transistor with tunable sensitivity/doi:10.1016%2Fj.orgel.2017.06.010/rivista:Organic electronics (Print)/anno:2017/pagina_da:188/pagina_a:193/intervallo_pagine:188–193/volume:48
Despite their great potentiality, ISFET-like devices generally suffer from an intrinsic limitation in sensitivity, the so-called Nernst limit. Moreover, the high costs, the restricted range of employable materials associated to the silicon technology
Autor:
Nikolai Severin, Piero Cosseddu, Annalisa Bonfiglio, Jürgen P. Rabe, Ingo Salzmann, Vitalij Scenev, Norbert Koch, Martin Oehzelt
Publikováno v:
Organic electronics
14 (2013): 1323–1329. doi:10.1016/j.orgel.2013.02.030
info:cnr-pdr/source/autori:Scenev V. [ 1 ] ; Cosseddu P. [ 2,3 ] ; Bonfiglio A. [ 2,3 ] ; Salzmann I. [ 1 ] ; Severin N. [ 1 ] ; Oehzelt M. [ 4 ] ; Koch N. [ 1,4 ] ; Rabe J. P. [ 1 ]/titolo:Origin of mechanical strain sensitivity of pentacene thin-film transistors/doi:10.1016%2Fj.orgel.2013.02.030/rivista:Organic electronics (Print)/anno:2013/pagina_da:1323/pagina_a:1329/intervallo_pagine:1323–1329/volume:14
14 (2013): 1323–1329. doi:10.1016/j.orgel.2013.02.030
info:cnr-pdr/source/autori:Scenev V. [ 1 ] ; Cosseddu P. [ 2,3 ] ; Bonfiglio A. [ 2,3 ] ; Salzmann I. [ 1 ] ; Severin N. [ 1 ] ; Oehzelt M. [ 4 ] ; Koch N. [ 1,4 ] ; Rabe J. P. [ 1 ]/titolo:Origin of mechanical strain sensitivity of pentacene thin-film transistors/doi:10.1016%2Fj.orgel.2013.02.030/rivista:Organic electronics (Print)/anno:2013/pagina_da:1323/pagina_a:1329/intervallo_pagine:1323–1329/volume:14
We report on bending strain-induced changes of the charge carrier mobility in pentacene organic thin-film transistors employing a combined investigation of morphological, structural, and electrical properties. The observed drain current variations ar
Publikováno v:
Organic electronics
14 (2013): 206–211. doi:10.1016/j.orgel.2012.10.033
info:cnr-pdr/source/autori:Cosseddu P. [ 1,2 ] ; Tiddia G. [ 1 ] ; Milita S. [ 3 ] ; Bonfiglio A. [ 1,2 ]/titolo:Continuous tuning of the mechanical sensitivity of Pentacene OTFTs on flexible substrates: From strain sensors to deformable transistors/doi:10.1016%2Fj.orgel.2012.10.033/rivista:Organic electronics (Print)/anno:2013/pagina_da:206/pagina_a:211/intervallo_pagine:206–211/volume:14
14 (2013): 206–211. doi:10.1016/j.orgel.2012.10.033
info:cnr-pdr/source/autori:Cosseddu P. [ 1,2 ] ; Tiddia G. [ 1 ] ; Milita S. [ 3 ] ; Bonfiglio A. [ 1,2 ]/titolo:Continuous tuning of the mechanical sensitivity of Pentacene OTFTs on flexible substrates: From strain sensors to deformable transistors/doi:10.1016%2Fj.orgel.2012.10.033/rivista:Organic electronics (Print)/anno:2013/pagina_da:206/pagina_a:211/intervallo_pagine:206–211/volume:14
The aim of this work is to contribute to establish whether morphological properties prevail over crystal lattice organization in determining the cause for the observed sensitivity of organic semiconductors to mechanical deformations in Organic Thin F
Autor:
Anna Cavallini, Yongqiang Wang, Annalisa Bonfiglio, Michael Nastasi, Zengfeng Di, Beatrice Fraboni, Piero Cosseddu, R.K. Schulze
Publikováno v:
Organic electronics
12 (2011): 1552–1559. doi:10.1016/j.orgel.2011.05.018
info:cnr-pdr/source/autori:Fraboni B.; Cosseddu P.; Wang Y.Q.; Schulze R.K.; Di Z.F.; Cavallini A.; Nastasi M.; Bonfiglio A./titolo:Aging control of organic thin film transistors via ion-implantation/doi:10.1016%2Fj.orgel.2011.05.018/rivista:Organic electronics (Print)/anno:2011/pagina_da:1552/pagina_a:1559/intervallo_pagine:1552–1559/volume:12
12 (2011): 1552–1559. doi:10.1016/j.orgel.2011.05.018
info:cnr-pdr/source/autori:Fraboni B.; Cosseddu P.; Wang Y.Q.; Schulze R.K.; Di Z.F.; Cavallini A.; Nastasi M.; Bonfiglio A./titolo:Aging control of organic thin film transistors via ion-implantation/doi:10.1016%2Fj.orgel.2011.05.018/rivista:Organic electronics (Print)/anno:2011/pagina_da:1552/pagina_a:1559/intervallo_pagine:1552–1559/volume:12
One of the open issues in organic electronics is the long-term stability of devices based on organic materials, as oxidation is believed to be a major reason for early device failure. The focus of our research is to investigate the effects of low ene
Publikováno v:
Organic Electronics. 12:477-485
Controlling threshold voltage (VTH) and field-effect mobility (μFET) in organic thin-film transistors (OTFTs) is of primary importance to attain reliable devices that can be harnessed in more complicated circuits and eventually commercialized. In pa