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Autor:
Aaron Elbourne, Ali Zavabeti, Mohammad B. Ghasemian, Bao Yue Zhang, Ataur Rahman, Kourosh Kalantar-zadeh, Vaishnavi Krishnamurthi, Yongxiang Li, Jiong Yang, Guolin Zheng, Lan Wang, Nasir Mahmood, Paul Atkin, Hareem Khan, Torben Daeneke, Salvy P. Russo, Anil R. Ravindran, Sumeet Walia
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Nature Communications
Nature Communications
The predicted strong piezoelectricity for monolayers of group IV monochalcogenides, together with their inherent flexibility, makes them likely candidates for developing flexible nanogenerators. Within this group, SnS is a potential choice for such n
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Nature Communications
Nature Communications
We report gallium arsenide (GaAs) growth rates exceeding 300 µm h−1 using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium monochloride conversion efficiency, and by utilizing a mass-transport-limit