Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Haroon Ahmed"'
Autor:
Seung-Beck Lee, David G. Hasko, L. A. W. Robinson, Gehan A. J. Amaratunga, Haroon Ahmed, Kenneth B. K. Teo, William I. Milne, Manish Chhowalla, David A. Williams
Publikováno v:
Nanotechnology. 14:290-293
We have fabricated self-aligned, side-gated suspended multi-walled carbon nanotubes (MWCNTs), with nanotube-to-gate spacing of less than 10 nm. Evaporated metal forms an island on a suspended MWCNT, the island and the nanotube act as a mask shielding
Autor:
Manishkumar Chhowalla, Kbk Teo, Gehan A. J. Amaratunga, V. Semet, A. Loiseau, William I. Milne, Shinbuhm Lee, Pierre Legagneux, Haroon Ahmed, G. Pirio, David G. Hasko, M. Castignolles, O. Groening, Didier Pribat, Vu Thien Binh
Publikováno v:
Nanotechnology. 14:204-211
The ability to grow carbon nanotubes/nanofibres (CNs) with a high degree of uniformity is desirable in many applications. In this paper, the structural uniformity of CNs produced by plasma enhanced chemical vapour deposition is evaluated for field em
Publikováno v:
Nanotechnology. 14:188-191
We describe the fabrication and digital logic operation of superconducting nanotransistors. The nanotransistor is a superconducting weak-link device that has integrated hot-phonon injector heaters to control its switching critical current. The fabric
Autor:
Kenneth B. K. Teo, Haroon Ahmed, Aun Shih Teh, Seung-Beck Lee, Manish Chhowalla, David G. Hasko, William I. Milne, Gehan A. J. Amaratunga
Publikováno v:
Nanotechnology. 14:192-195
We report on the fabrication and field emission of carbon nanotube lateral field emitters. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by plasma-enhanced chemical vapour deposit
Autor:
Hiroshi Mizuta, G. Evans, Kazuo Nakazato, Haroon Ahmed, Shuhei Amakawa, Andrew C. Irvine, Zahid A. K. Durrani, Kazuhito Tsukagoshi, Heinz Olaf Müller, David A. Williams
Publikováno v:
Nanotechnology. 12:155-159
This paper gives a brief review of our recent work done in the area of nanometre-scale Coulomb blockade (CB) memory and logic devices, that enable us to realize future electron-number scalability by overcoming inherent problems to conventional semico