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pro vyhledávání: '"Dan-Dan Liu"'
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract Amorphous In–Ga–Zn-O (a-IGZO) thin-film transistor (TFT) memories are attracting many interests for future system-on-panel applications; however, they usually exhibit a poor erasing efficiency. In this article, we investigate voltage-pol
Externí odkaz:
https://doaj.org/article/d86e1be5300846afaece6fa461c5d3f5