Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Denis V"'
Autor:
Artem G. Rybkin, Anna V. Erofeevskaya, V. K. Adamchuk, Arthur Ernst, A. E. Petukhov, Vladimir Yu. Voroshnin, Elmar Yu. Kataev, Oleg Yu. Vilkov, Evgueni V. Chulkov, Alexander Fedorov, Dmitry Yu. Usachov, Denis V. Vyalikh, Clemens Laubschat, Ilya I. Ogorodnikov, Lada V. Yashina, M. V. Kuznetsov, Mikhail M. Otrokov
Publikováno v:
Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very li
Publikováno v:
Nano Letters. 14:6185-6189
Arrays of highly strained 5-25 nm-wide regions have been prepared on rutile TiO2(110) surface through a low energy Ar ion bombardment technique. Using scanning tunneling microscopy (STM) and an innovative STM tip-triggered nanoexplosion approach we s
Autor:
Boris V. Senkovskiy, Alexander Grüneis, V. K. Adamchuk, Alexander Fedorov, Oleg Yu. Vilkov, Nikolay I. Verbitskiy, Lada V. Yashina, Clemens Laubschat, Andrey A. Volykhov, Dmitry Yu. Usachov, Denis V. Vyalikh, Mani Farjam
Publikováno v:
Nano Letters. 14:4982-4988
Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material stil
Autor:
Danny Haberer, Pavel Dudin, Clemens Laubschat, Oleg Yu. Vilkov, Alexander Fedorov, V. K. Adamchuk, Alexei Barinov, Alexander Grüneis, Martin Oehzelt, Dmitry Yu. Usachov, Denis V. Vyalikh, Alexei Preobrajenski
Publikováno v:
Nano Letters. 11:5401-5407
A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a pos
Autor:
Martin Knupfer, Kurt Kummer, Jun Fujii, Torben Hänke, Alexei Zakharov, Giancarlo Panaccione, Grzegorz Urbanik, Ivana Vobornik, O. V. Molodtsova, Alexei Preobrajenski, Yuri A. Ossipyan, Bernd Büchner, Denis V. Vyalikh, Victor Yu. Aristov, Christian Hess
Publikováno v:
Nano letters
info:cnr-pdr/source/autori:Aristov, Victor Yu.; Urbanik, Grzegorz; Kummer, Kurt; Vyalikh, Denis V.; Molodtsova, Olga V.; Preobrajenski, Alexei B.; Zakharov, Alexei A.; Hess, Christian; Haenke, Torben; Buechner, Bernd; Vobornik, Ivana; Fujii, Jun; Panaccione, Giancarlo; Ossipyan, Yu/titolo:Graphene Synthesis on Cubic SiC%2FSi Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices/doi:10.1021%2Fnl904115h/rivista:Nano letters (Print)/anno:2010/pagina_da:992/pagina_a:995/intervallo_pagine:992–995/volume:10
info:cnr-pdr/source/autori:Aristov, Victor Yu.; Urbanik, Grzegorz; Kummer, Kurt; Vyalikh, Denis V.; Molodtsova, Olga V.; Preobrajenski, Alexei B.; Zakharov, Alexei A.; Hess, Christian; Haenke, Torben; Buechner, Bernd; Vobornik, Ivana; Fujii, Jun; Panaccione, Giancarlo; Ossipyan, Yu/titolo:Graphene Synthesis on Cubic SiC%2FSi Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices/doi:10.1021%2Fnl904115h/rivista:Nano letters (Print)/anno:2010/pagina_da:992/pagina_a:995/intervallo_pagine:992–995/volume:10
The outstanding properties of graphene, a single graphite layer, render it a top candidate for substituting silicon in future electronic devices. The so far exploited synthesis approaches, however, require conditions typically achieved in specialized
Autor:
Martin Knupfer, Alexander Grüneis, Denis V. Vyalikh, Simone Taioli, Danny Haberer, Klaus Ziegler, Thomas Pichler, Stefano Simonucci, Bernd Büchner, Mani Farjam, Balázs Dóra, Jörg Fink, M. S. Dresselhaus, Dmitry Marchenko
Publikováno v:
Nano letters. 10(9)
We show by angle-resolved photoemission spectroscopy that a tunable gap in quasi-free-standing monolayer graphene on Au can be induced by hydrogenation. The size of the gap can be controlled via hydrogen loading and reaches approximately 1.0 eV for a
Autor:
Richard M. Osgood, Denis V. Potapenko
Publikováno v:
Nano letters. 9(6)
Ti-Au surface alloy oxidation is used to form nanocrystals of TiO(2) on Au(111). In situ scanning tunneling microscopy (STM) studies show that the approach yields arrays of 8-11 nm wide crystals with relatively narrow size dispersion and uniform crys
Autor:
Alla Chikina, Yury M. Koroteev, V. K. Adamchuk, Alexander Grüneis, A. E. Petukhov, Mikhail M. Otrokov, Oleg Yu. Vilkov, Alexander Fedorov, Evgueni V. Chulkov, Dmitry Yu. Usachov, Denis V. Vyalikh, Artem G. Rybkin, Clemens Laubschat
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano Letters
Nano letters. 2015. Vol. 15, № 4. P. 2396-2401
instname
Nano Letters
Nano letters. 2015. Vol. 15, № 4. P. 2396-2401
With the discovery and first characterization of graphene, its potential for spintronic applications was recognized immediately. Since then, an active field of research has developed trying to overcome the practical hurdles. One of the most severe ch