Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Martin Albrecht"'
Autor:
M. Teisseire, M. Laügt, Martin Albrecht, L. Nguyen, Sosse Ndiaye, Zahia Bougrioua, Phillippe Vennéguès, Mathieu Leroux, Pierre Gibart, Tobias Guhne
Publikováno v:
MRS Online Proceedings Library
MRS Online Proceedings Library, 2006, 955, ⟨10.1557/PROC-0955-I12-04⟩
Scopus-Elsevier
MRS Online Proceedings Library Archive
MRS Online Proceedings Library Archive, Cambridge University Press, 2006, 955, ⟨10.1557/PROC-0955-I12-04⟩
MRS Online Proceedings Library, 2006, 955, ⟨10.1557/PROC-0955-I12-04⟩
Scopus-Elsevier
MRS Online Proceedings Library Archive
MRS Online Proceedings Library Archive, Cambridge University Press, 2006, 955, ⟨10.1557/PROC-0955-I12-04⟩
Optical properties of GaN templates grown by the Epitaxial Lateral Overgrowth (ELO) technique along the nonpolar (1120) and the semipolar (1122) directions on R- and M-sapphire were investigated. Spatially resolved Cathodoluminescence (CL) was carrie
Autor:
Martin Albrecht, G. Bösker, Hyonju Kim, Nicolaas Stolwijk, Ch. Jäger, Ulf Södervall, Thorvald Andersson, Wolfgang Jäger
Publikováno v:
Scopus-Elsevier
We have investigated microstructural properties of GaAs:N and GaN:As layers using transmission electron microscopy. The samples were grown onto (001)-oriented GaAs substrates by RF-plasma assisted molecular beam epitaxy. It has been found that during
Publikováno v:
Scopus-Elsevier
Using liquid phase epitaxy from Bi solution in the temperature range 550°–700°C at low growth rates we study the formation of ripples and islands and their interdependence. As main results we find from the dependencies on growth time and temperat
Autor:
Robert F. Davis, Horst P. Strunk, D. Hanser, Ana Cremades, Martin Albrecht, Javier Piqueras, J. M. Ulloa
Publikováno v:
Scopus-Elsevier
A series of 100 nm thick InGaN films with In content up to 14% has been grown by MOVPE on SiC substrates. Optical characterization was carried out by means of reflectance spectrometry, photoluminescence and cathodoluminescence. Optical properties of
Publikováno v:
Scopus-Elsevier
Using liquid phase epitaxy from Bi solution, a by its nature a near equilibrium growth process, we study the kinetics of island formation in the heteroepitaxial system SiGe/Si(001) as dependent on growth temperature, growth rate and composition (whic
Autor:
A. A. Andreev, P. C. Taylor, Martin Albrecht, S. B. Aldabergenova, Horst P. Strunk, J. M. Viner, C. E. Inglefield
Publikováno v:
MRS Proceedings. 536
We report on strong Er3+ luminescence in the visible and infra-red regions at room temperature in amorphous GaN:Er thin films prepared by DC magnetron co-sputtering. The intensity of the Er3+ luminescence at 1.535 μm corresponding to 4I13/2 → 4I15
Autor:
Martin Albrecht, A Pelzmann, Horst P. Strunk, B. Holländer, C. Kirchner, M Mayer, S. Mantl, Markus Kamp, Silke Christiansen
Publikováno v:
MRS Proceedings. 512
Epitaxial GaN films grown by metal organic vapour phase epitaxy (MOVPE) or gas source molecular beam epitaxy (GSMBE) have opened up new applications in short wavelength photonic devices as well as high-power and high-temperature devices. The large la
Autor:
Karl Joachim Ebeling, M Mayer, Silke Christiansen, Giancarlo Salviati, Robert F. Davis, Horst P. Strunk, Martin Albrecht, Y. G. Shreter, Markus Kamp, C. Zanotti-Fregonara, Y. T. Rebane, Michael D. Bremser, A Pelzmann
Publikováno v:
MRS Proceedings. 468
We correlate structure analyzed by transmission electron microscopy with photo- and cathodoluminescence studies of GaN/Al2O3(0001) and GaN/SiC(0001) and show that an additional UV line at 364nm/3.4eV can be connected to the occurrence of stacking fau
Publikováno v:
Scopus-Elsevier
Using finite elements we quantitatively calculate the inhomogeneous strain distribution associated with the so called crosshatch pattern. This pattern is a twodimensional, pseudoregular surface undulation that generally arises as an intermediate stag
Autor:
B. Steiner, Martin Albrecht, Günter Wagner, A. Voigt, Th. Bergmann, Horst P. Strunk, W. Dorsch
Publikováno v:
MRS Proceedings. 358
We investigate the crystalline and electrical quality of thin layers epitaxially grown on polycrystalline substrates from metallic solution by the method of electron beam induced current, transmission electron microscopy and etching experiments. We o