Zobrazeno 1 - 3
of 3
pro vyhledávání: '"J.P. Stoquert"'
Autor:
P. Kern, Dieter Grambole, Fabrice Piazza, Liam McDonnell, A. Golanski, J.P. Stoquert, Jean Hommet, Folker Herrmann
Publikováno v:
MRS Spring Meeting, San Francisco, USA, April 16-20, 2001; Mat. Res. Soc. Symp. Proc. Vol. 675 (2001) W12.2.1
A Distributed Electron Cyclotron Resonance plasma reactor powered by a microwave generator operating at 2.45 GHz was used to deposit ta-C:H (Diamond-Like Carbon, DLC) thin films at RT. A graphite sputtering target immersed in an argon plasma was used
Publikováno v:
MRS Proceedings. 354
We investigate, for the first time, the possibility to crystallize heavily Ge and C implanted silicon substrates by excimer-laser annealing performed in the molten regime. It is demonstrated that the crystalline quality of the laser grown SiGeC alloy
Publikováno v:
MRS Proceedings. 285
Silicon oxide and oxynitride films are deposited, at low temperature (≤ 450°C) by pulsed ArF excimer laser ablation from silicon, silicon monoxide, fused silica and silicon nitride targets, performed under vacuum and in oxygen atmosphere. We inves