Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Martin Albrecht"'
Autor:
Martin Albrecht, G. Bösker, Hyonju Kim, Nicolaas Stolwijk, Ch. Jäger, Ulf Södervall, Thorvald Andersson, Wolfgang Jäger
Publikováno v:
Scopus-Elsevier
We have investigated microstructural properties of GaAs:N and GaN:As layers using transmission electron microscopy. The samples were grown onto (001)-oriented GaAs substrates by RF-plasma assisted molecular beam epitaxy. It has been found that during
Autor:
A. A. Andreev, P. C. Taylor, Martin Albrecht, S. B. Aldabergenova, Horst P. Strunk, J. M. Viner, C. E. Inglefield
Publikováno v:
MRS Proceedings. 536
We report on strong Er3+ luminescence in the visible and infra-red regions at room temperature in amorphous GaN:Er thin films prepared by DC magnetron co-sputtering. The intensity of the Er3+ luminescence at 1.535 μm corresponding to 4I13/2 → 4I15
Autor:
B. Steiner, Martin Albrecht, Günter Wagner, A. Voigt, Th. Bergmann, Horst P. Strunk, W. Dorsch
Publikováno v:
MRS Proceedings. 358
We investigate the crystalline and electrical quality of thin layers epitaxially grown on polycrystalline substrates from metallic solution by the method of electron beam induced current, transmission electron microscopy and etching experiments. We o