Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Martin Albrecht"'
Publikováno v:
Scopus-Elsevier
Using liquid phase epitaxy from Bi solution in the temperature range 550°–700°C at low growth rates we study the formation of ripples and islands and their interdependence. As main results we find from the dependencies on growth time and temperat
Autor:
Karl Joachim Ebeling, M Mayer, Silke Christiansen, Giancarlo Salviati, Robert F. Davis, Horst P. Strunk, Martin Albrecht, Y. G. Shreter, Markus Kamp, C. Zanotti-Fregonara, Y. T. Rebane, Michael D. Bremser, A Pelzmann
Publikováno v:
MRS Proceedings. 468
We correlate structure analyzed by transmission electron microscopy with photo- and cathodoluminescence studies of GaN/Al2O3(0001) and GaN/SiC(0001) and show that an additional UV line at 364nm/3.4eV can be connected to the occurrence of stacking fau
Publikováno v:
Scopus-Elsevier
Using finite elements we quantitatively calculate the inhomogeneous strain distribution associated with the so called crosshatch pattern. This pattern is a twodimensional, pseudoregular surface undulation that generally arises as an intermediate stag
Publikováno v:
MRS Proceedings. 238
The initial stages of heteroepitaxial growth of Ge0.85 Si0.15 on Si(001) grown from Bi solution (liquid phase epitaxy) are studid by transmission electron microscopy. Stranski-Krastanov growth is observed to take place. After growth of a pseudomorphi