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pro vyhledávání: '"311"'
Autor:
Koji Muraki, Alex R. Hamilton, Adam P. Micolich, Yoshiro Hirayama, Michelle Y. Simmons, W. R. Clarke
Publikováno v:
Microelectronics Journal. 36:327-330
We demonstrate a novel heterostructure for inducing 2D hole systems in (311)A GaAs–AlGaAs heterostructures that offers advantages over previous methods including low turn on voltages, easier fabrication and good interface roughness. The heterostruc
Autor:
A. C. Churchill, Michelle Y. Simmons, D. R. Mace, Gil-Ho Kim, Michael Pepper, A. Kurobe, David A. Ritchie, Alex R. Hamilton
Publikováno v:
Microelectronics Journal. 26:897-902
We demonstrate that the (311)B surface of GaAs can be used for the fabrication of high mobility (μ ≅ 2.4 × 106 cm2 V−1 s−1) two-dimensional electron gases, in which the mobility is found to be anisotropic with μ[233] > μ[011]. This paper re
Publikováno v:
Scopus-Elsevier
The ability to grow high quality (InGa)As on the (111)A surface is essential for the production of a wide range of optoelectronic devices, but the topic has so far received little attention. What work there has been shows it to be highly problematic,
Autor:
Alex R. Hamilton, S. J. Stevens, Michelle Y. Simmons, Michael Pepper, Atsushi Kurobe, David A. Ritchie
Publikováno v:
Microelectronics Journal. 28:795-801
This paper reports the fabrication of an in situ back-gated hole gas on the (311)A surface of GaAs. The hole density can be varied from fully depleted to ps = 2.1 × 1011 cm−2 with mobilities of up to μ = 1.1 × 106 cm2V−1 s−1. It is seen that
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Autor:
Pallab Bhattacharya
Publikováno v:
Microelectronics Journal. 26:887-896
The epitaxy of lattice-matched and strained semi-conducting films on patterned and misoriented substrates has led to new growth phenomena, material properties and device applications. Our work on InP- and GaAs-based heterostructures on (111)- and (31
Publikováno v:
Microelectronics Journal. 26:739-744
We report on a series of Be-doped GaAs/(AlGa)As two-dimensional hole gas (2DHG) structures grown on (110), (111)B, (211)B and (311)B oriented substrates and compare their properties with high mobility samples grown on (311)A using Si doping. The samp
Autor:
Peter Werner, S. S. Ruvimov, V. M. Ustinov, B. Ya. Meltser, Mikhail V. Maximov, Marius Grundmann, C. M. Sotomayor Torres, M. V. Belousov, N. N. Ledentsov, Ulrich Gösele, Zh. I. Alferov, P. S. Kop’ev, J. Heidenreich, Sergei Ivanov, P. D. Wang, W. Richter, Dieter Bimberg, V. A. Shchukin
Publikováno v:
Microelectronics Journal. 26:871-879
Similar effects are responsible for self-organization of periodically corrugated surface structures and ordered dot arrays on crystal surfaces. Strain relaxation on facet edges may result in the appearance of periodically corrugated surfaces for latt