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Autor:
Pallab Bhattacharya
Publikováno v:
Microelectronics Journal. 26:887-896
The epitaxy of lattice-matched and strained semi-conducting films on patterned and misoriented substrates has led to new growth phenomena, material properties and device applications. Our work on InP- and GaAs-based heterostructures on (111)- and (31