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Autor:
A. C. Churchill, Michelle Y. Simmons, D. R. Mace, Gil-Ho Kim, Michael Pepper, A. Kurobe, David A. Ritchie, Alex R. Hamilton
Publikováno v:
Microelectronics Journal. 26:897-902
We demonstrate that the (311)B surface of GaAs can be used for the fabrication of high mobility (μ ≅ 2.4 × 106 cm2 V−1 s−1) two-dimensional electron gases, in which the mobility is found to be anisotropic with μ[233] > μ[011]. This paper re