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pro vyhledávání: '"311"'
Publikováno v:
Scopus-Elsevier
The ability to grow high quality (InGa)As on the (111)A surface is essential for the production of a wide range of optoelectronic devices, but the topic has so far received little attention. What work there has been shows it to be highly problematic,
Autor:
Alex R. Hamilton, S. J. Stevens, Michelle Y. Simmons, Michael Pepper, Atsushi Kurobe, David A. Ritchie
Publikováno v:
Microelectronics Journal. 28:795-801
This paper reports the fabrication of an in situ back-gated hole gas on the (311)A surface of GaAs. The hole density can be varied from fully depleted to ps = 2.1 × 1011 cm−2 with mobilities of up to μ = 1.1 × 106 cm2V−1 s−1. It is seen that
Autor:
Pallab Bhattacharya
Publikováno v:
Microelectronics Journal. 26:887-896
The epitaxy of lattice-matched and strained semi-conducting films on patterned and misoriented substrates has led to new growth phenomena, material properties and device applications. Our work on InP- and GaAs-based heterostructures on (111)- and (31