Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Akinobu Teramoto, Shigetoshi Sugawa, Hyeonwoo Park, T. Inatsuka, Tadahiro Ohmi, Rihito Kuroda
Publikováno v:
Microelectronic Engineering. 109:298-301
Graphical abstractDisplay Omitted SILC caused by hot-hole injection depends only on the number of injected holes.SILC is independent of the filed, and carrier density and energy at the stress.SILC increases exponentially at an early stress and linear
Publikováno v:
Microelectronic Engineering. 88:3133-3139
The flattening speed of the low temperature atomically flattening technology is evaluated in order to apply atomically flat surface of (100) orientation on large-diameter silicon wafers to the LSI manufacturing. The atomically flatness of the whole s
Autor:
Toyohiko Kinoshita, Atsushi Ogura, Tadahiro Ohmi, Takeo Hattori, Tomoyuki Suwa, Kohki Nagata, Shigetoshi Sugawa, Takayuki Muro, Hiroshi Nohira, Akinobu Teramoto
Publikováno v:
Microelectronic Engineering. 109:197-199
Transition layer formed between SiO2 and Si substrate were clarified by XPS.Compositional transition layer (CTL) consists of the 1st CTL and the 2nd CTL.The β-Si is closely correlated with the oxidation-induced residual stress. The angle-resolved Si
Publikováno v:
Microelectronic Engineering. 84:2105-2108
In this paper, the electrical characteristics of multi-gate MOSFETs (MUGFETs) using the advanced radical gate oxide and a suppression of Negative bias temperature degradation in accumulation mode FD-SOI MOSFETs are described. Firstly, we experimental
Publikováno v:
Microelectronic Engineering. 86:1786-1788
In this paper, we experimentally investigate the performance of multi-gate MOSFETs (MUGFETs) using the advanced radical gate oxide and the accumulation-mode (AM) FD-SOI MOSFETs. Firstly, we experimentally demonstrate that the drain current in AM mult