Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Sun, Jin"'
Publikováno v:
Microelectronic Engineering. 85:348-354
The etching mechanism of ZrO"2 thin films in BCl"3/Ar plasma was investigated using a combination of experimental and modeling methods. It was found that an increase in the Ar mixing ratio causes the non-monotonic behavior of the ZrO"2 etch rate whic
Publikováno v:
Microelectronic Engineering. 13:115-118
Silylation and dry development are the key processes of DESIRE technique. In the present work, the silylation of resist has been investigated as a function of prebake temperature and TMSDEA concentration. The effect of neutral scatterer, He, on aniso