Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Venturini, A."'
Autor:
Luis Eduardo Caldeira, Tiago Bender Wermuth, Thais Lemes Ruwer, Carlos Perez Bergmann, Waleska Campos Guaglianoni, Janio Venturini
Publikováno v:
Materials Science and Engineering: B. 263:114896
Research on TiO2 nanotubes gained prominence in the past years due to their photoelectrochemical behavior. Metallic ion doping via a simple and fast method of production can dictate a path in order to achieve and improve such application. This work r
Autor:
Dominique Débarre, J.-L. Santailler, H. Akhouayri, D. Camel, C. Laviron, J. Boulmer, G. Kerrien, J. Venturini, D. Berard, M. Hernandez, T. Sarnet
Publikováno v:
Materials Science and Engineering: B. :105-108
Semiconductor doping is a critical step in microelectronic device fabrication. Particularly, ultra-shallow junction formation for the CMOS 45-nm node is today intensively studied. Laser thermal processing (LTP) has already shown potentiality to achie