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pro vyhledávání: '"Yi-Fang Liu"'
Publikováno v:
Key Engineering Materials. :341-346
In MEMS device, heavily boron doped layers are widely used as structural layers. For the manufacture of the thick heavily boron doped layer (boron concentration ≥ 5×1019 cm-3), conventional two-step method exposes disadvantages of low efficiency a
Publikováno v:
Key Engineering Materials. 503:318-323
Only when the tunneling gap is maintained near 10Å can the micromachined tunneling gyroscope operate regularly to generate tunneling current which is so weak that it would be submerged by the thermal-mechanical noise, 1/f tunneling noise and so on.