Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Bruce A. Smith"'
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2116-2120
The degradation of projected images using TM polarization is not intrinsic because losses in image contrast can be recoverable. By controlling the photoresist/substrate interface reflectivity, high modulation for TM polarization can be maintained for
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2192-2196
In recent years, the anomalous transmission of subwavelength apertures has become an emergent subject within the physical sciences. While the gain mechanism of these structures is still uncertain, the effect has been observed in several studies. Simi
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:814
CrxNy and CrxOyNz thin films and multilayer CrxNy–CrxOyNz thin films have been investigated as a binary masking material for 157 nm lithography. The chemical compositions of commercial photolithography masks were determined to be a bilayer structur
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:42
We report on a process for the fabrication of Mo2C and HfC refractory metal carbide field emitter arrays using a modified Spindt tip fabrication process. Measurements of the aspect ratios of emitter cones showed that Mo2C tip structures have an aspec
Publikováno v:
Scopus-Elsevier
Emitter life and emission stability of field emission vacuum microelectronic devices are strongly influenced by the morphology and surface chemistry of the emission surfaces. Vacuum microelectronic devices like field emission displays (FEDs) are vacu
Autor:
John S. Petersen, Bruce W. Smith
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:3405
Through modification of the illumination system of optical lithography tools, resolution and focal depth improvements can allow for near diffraction limited imaging. Most often, lens aberrations are evaluated assuming full use of a lens pupil. With o
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2259
This article gives details on plasma etch process development for potential attenuated phase shift masking materials for use at 193 nm. Masking films investigated include materials based on aluminum nitride, zirconium nitride, molybdenum–silicon ox
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2444
A variety of materials based on various oxides, nitrides, fluorides, and composites have been found to be potentially suitable for use as attenuated phase masking materials for use at excimer laser wavelengths. Presented here are results from the inv
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:3719
In order to push resolution toward diffraction limits for 248 and 193 nm lithography, it is likely that some combination of optical enhancement may be needed. The attenuated phase shift mask approach may prove to be one of the less complex techniques