Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Tetsuya Goto, Tadahiro Ohmi, Seij Yasuda, Atsutoshi Inokuchi, Masayuki Kohno, Masaki Hirayama, Toshio Nakanishi, Kiyotaka Ishibashi, Masaru Sasaki, Masahiro Okesaku, Toshihisa Nozawa
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:686-695
The authors developed a ceramic upper shower plate used in the microwave-excited high-density plasma process equipment incorporating a dual shower-plate structure to establish a very uniform gas-flow pattern in the process chamber. Thousands of very
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:653-659
Novel magnetron-sputtering equipment, called rotation magnet sputtering (ROT-MS), was developed to overcome various disadvantages of current magnetron-sputtering equipment. Disadvantages include (1) very low target utilization of less than 20%, (2) d
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:423-429
Multiprocesses in a single plasma process chamber with high throughput require precise, sequential, high-speed alteration of partial pressures of multiple gas species. A conventional gas-distribution system cannot realize this because the system seri
Autor:
Tadahiro Ohmi, Shigetoshi Sugawa, Kazuyuki Ikenaga, Akinobu Teramoto, Masaki Hirayama, Tetsuya Goto
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:8-16
Microwave-excited high-density plasma etching equipment with a dual shower-plate structure has been developed to overcome various disadvantageous of current reactive-ion etching equipment. Disadvantages include severe charge-up damage, heavy dependen
Autor:
Isao Akutsu, Tadahiro Ohmi
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3505-3508
A new screw pump has been developed as a useful backing pump for high-gas-flow semiconductor processing. The characteristic features of the screws are unequal lead and unequal slant angle, which realize higher pumping speed and smaller volume of the
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3129-3133
Direct nitridation of silicon surface can be realized at a temperature as low as 430 °C by using high-density plasma above 1012 cm−3 featuring low ion bombardment energy below 7 eV. This study shows that stoichiometric silicon nitride can be obtai
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3134-3138
Polycrystalline silicon is grown at a temperature of 300 °C by microwave-excited plasma enhanced chemical vapor deposition using SiH4/Xe. The grain size measured by x-ray diffraction is about 25 nm. High-density (>1012 cm−3) plasma having very low
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3144-3148
Because the semiconductor industry is moving to a larger wafer size and higher process speed, a vacuum pump will be required to have higher pumping speed in both the viscous and molecular flow ranges. The “gradational lead screw (GLS) pump” unlik
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:2703-2710
Turbomolecular pumps (TMP) have been widely used in low-pressure processing, because TMP can pump a large flow of gas as well as can exhaust the system to a suitable base pressure. A TMP, however, has the problem that its pumping speed is severely de
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:181-187
After confirming the basic characteristics of two types of metal gasket fittings, which are used in construction of ultrapure gas delivery systems for semiconductor manufacturing, it is noticed that the pipe usually twists at the time the fitting is