Zobrazeno 1 - 10
of 121
pro vyhledávání: '"550"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1376-1380
Cerium-substituted Bi4Ti3O12 (Bi3.4Ce0.6Ti3O12) thin films were prepared by using metal-organic decomposition method. Ferroelectric cerium-substituted Bi4Ti3O12 thin films were fabricated by spin coating onto a Pt/Ti/SiO2/Si substrate. The structure
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:2653-2662
Electron transport phenomena across Au/CaF2/n-Si (111) heterostructures, in which calcium fluoride (CaF2) [about two monolayers (ML)] was introduced into the interface at room temperature (RT), 550 °C, and 700 °C, have been studied by ballistic ele
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:2437-2440
Schottky contacts formed by Al/Si1−xGex and Pd/Si1−xGex, with x=0.17 and 0.20, have been investigated by using current–voltage–temperature analysis. The Schottky barrier height varied with Al and Pd as the Schottky metal. The current transpor
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1053-1057
This article describes a high pressure magnetron sputtering technique that results in milky transparent conducting Al‐doped ZnO (ZnO:Al) films with a textured surface prepared on substrates at a temperature of 200 °C. Large‐area milky transparen
Autor:
A. K. Runchal, M. A. Zook
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:850-855
A computational fluid dynamics model was developed to simulate atmospheric pressure chemical vapor deposition of silicate glasses. The model is used to examine chamber geometry and substrate placement effects on fluid flow and temperature profiles. T
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:3929-3933
The composition and structure of boron nitride films prepared by thermal and plasma enhanced chemical vapor deposition (CVD) using borazine as a precursor have been studied. Thermal CVD at temperatures between 475 and 550 °C using either a hot‐wal
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:751-753
Metalorganic chemical vapor deposition of BaTiO3 thin films on indium tin oxide–coated soda lime glass substrate in the temperature range between 400 and 550 °C was investigated to produce an insulating layer with high breakdown voltage and a smoo
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:792-795
A single‐crystalline epitaxial film of GaAs has been grown on Si using an ionized cluster beam technique. The native oxide layer on the silicon substrate was removed at 550 °C by use of an accelerated arsenic ion beam, instead of a high‐temperat
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:794-798
In this paper, the results of an investigation of the Mo–polycide/Al–1% Si interface characteristics are reported. Mo–polycide was produced by sputtering a 0.3 μm MoSi2.2 film on 0.3 μm of phosphorus doped poly‐Si. The composite layer was r
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:709-713
We have examined the thermal stability of Al–Si/TiSi2/Si Schottky diodes both with and without a sputter‐deposited W–Ti (10 wt. %) diffusion barrier after furnace annealing up to 550 °C, 30 min. The diodes having the diffusion barrier exhibit