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pro vyhledávání: '"550"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1053-1057
This article describes a high pressure magnetron sputtering technique that results in milky transparent conducting Al‐doped ZnO (ZnO:Al) films with a textured surface prepared on substrates at a temperature of 200 °C. Large‐area milky transparen
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:794-798
In this paper, the results of an investigation of the Mo–polycide/Al–1% Si interface characteristics are reported. Mo–polycide was produced by sputtering a 0.3 μm MoSi2.2 film on 0.3 μm of phosphorus doped poly‐Si. The composite layer was r
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:709-713
We have examined the thermal stability of Al–Si/TiSi2/Si Schottky diodes both with and without a sputter‐deposited W–Ti (10 wt. %) diffusion barrier after furnace annealing up to 550 °C, 30 min. The diodes having the diffusion barrier exhibit
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:1187-1193
Epitaxial TiN films were grown on (100), (110), and (111) oriented MgO by reactive magnetron sputtering from a Ti target in both mixed Ar/N2 and pure N2 discharges. An applied negative substrate bias Vs (0≤Vs≤600 V) was used to vary the flux and
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:500-503
Cross‐sectional transmission electron microscopy (X‐TEM) has been used to investigate the microstructure of TiN films deposited by reactive magnetron sputtering onto ASP 30 high speed steel (HSS) substrates. ASP 30 is a multiphase material consis
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:2039-2043
The atomic structures of (331)‐A and (331)‐B GaAs surfaces, prepared by ion bombardment and annealing (IBA) or by molecular‐beam epitaxy, are investigated with low‐energy electron diffraction, electron energy‐loss spectroscopy, and Auger el
Autor:
H. Akazawa, M. Shimada
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:1793-1798
Textured films of c-axis-oriented lithium niobate (LN) in a single Li:Nb=1:1 phase have been grown on Si(100) and Si(111) substrates by electron cyclotron resonance (ECR) plasma sputtering. The O2 partial pressure is critical in determining the compo
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:605-611
We prepared (Ti1−xAlx)N thin films by dc reactive sputtering using alloy targets and investigated their oxidation properties. The oxidation rate of the (Ti1−xAlx)N film decreases with increasing aluminum content because Al2O3, with a low oxygen d
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:171-174
The resistivity and the thermal stability of transparent conducting ZnO layers doped with aluminum have been correlated with the conditions of the sputtering process. Layers deposited at low rf power density (∼1.3 to 2.6 W/cm2) exhibit a low resist
Autor:
Y. B. Hahn, D. O. Kim
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1982-1986
The structural and electrical properties of SrTiO3 thin films (30–75 nm in thickness) prepared by plasma enhanced metalorganic chemical vapor deposition on Pt/Si and Ir/Si substrates were studied in terms of their crystallinity, microstructure, cur