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pro vyhledávání: '"Martin Albrecht"'
Autor:
Robert Schewski, M. Baldini, Andreas Fiedler, Klaus Irmscher, Detlef Klimm, Martin Albrecht, Günter Wagner
Publikováno v:
Journal of Materials Science. 51:3650-3656
Sn-doped β-Ga2O3 epitaxial layers have been grown on (100) β-Ga2O3 substrates by metal organic vapour-phase epitaxy. Triethylgallium (TEGa), molecular oxygen (O2) and tetraethyltin (TESn) were used as Ga, O and Sn precursors, respectively. Layers g