Zobrazeno 1 - 10
of 43
pro vyhledávání: '"35"'
Publikováno v:
Journal of Electronic Materials. 50:6426-6437
In this paper, two methods (magnetic stirring and mechanical ball milling) were used to modify the surface of lead zirconate titanate (PZT) particles. Then, poly(vinylidene fluoride) (PVDF)/PZT piezoelectric films were prepared by extrusion casting a
Autor:
Davide Beneventi, J. E. Broquin, Tan-Phu Vuong, Cécile Venet, Nadège Reverdy-Bruas, Didier Chaussy, Denis Curtil, F. Tricot
Publikováno v:
Journal of Electronic Materials
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2021, 50 (11), pp.6183-6195. ⟨10.1007/s11664-021-09145-7⟩
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2021, 50 (11), pp.6183-6195. ⟨10.1007/s11664-021-09145-7⟩
International audience; The ohmic curing of two silver micro-particle inks was studied. Silver lines of 35 to 75 µm thick were printed on a mixture of polycarbonate and acrylonitrile butadiene styrene (PC+ABS) substrate and on a mineral reinforced N
Publikováno v:
Journal of Electronic Materials. 50:4016-4026
Calcium-doped zinc oxide (CaZnO) and magnesium-doped zinc oxide (MgZnO) nanostructures were synthesized by a chemical bath deposition method. X-ray diffraction results revealed c-axis plane dominance for the ZnO and MgZnO samples, and a-axis plane do
Publikováno v:
Journal of Electronic Materials. 50:2870-2878
In this work, the Photo catalytic degradation of Congo red, as an azo dye, was investigated via a ZrO2/ZnO nanocomposite (NC) supported on montmorillonite (MMT) clay. The ZnO nanoparticles (NPs), and the ZrO2/ZnO, and ZrO2/ZnO/clay NCs were prepared
Publikováno v:
Journal of Electronic Materials. 24:1381-1386
The conduction band alignment of compressively strained In1−xGaxP relative to lattice matched InGaP/GaAs has been determined by capacitance-voltage profil-ing. A modified version of Kroemer’s capacitance-voltage profiling method is developed wher
Autor:
Guangheng Wu, Heribert Wiedemeier
Publikováno v:
Journal of Electronic Materials. 22:1121-1127
Cadmium telluride single crystals were grown at growth rates of 35 mm per day by the physical vapor transport (PVT) method under high temperature gradient conditions. This is believed to be the highest PVT growth rate of CdTe reported to date. Lamell
Publikováno v:
Journal of Electronic Materials. 49:5957-5963
A stoichiometric ratio of the Merck chlorides of Barium, Iron, nickel and NaOH as an agent was used to obtain the nano-crystalline ferrites (BaFe12O19, Ba4MnZnFe36O60 and NiFe2O4) by a combination of co-precipitation and high-energy reactive milling
Publikováno v:
Journal of Electronic Materials. 49:3819-3829
In this work, MoO3-TeO2 (MT) glasses are synthesized (xMoO3-100-xTeO2, in mol.%) by a simple melt-quenching method. It is found that the MT glass exhibits high specific capacities, significantly improved cycling performance for Li-ion batteries and c
Publikováno v:
Journal of Electronic Materials. 49:2008-2017
This paper presents a physics-based compact of indium mole fraction dependent analytical model for static and dynamic characteristics of GaN-based MOS-HEMTs. The model covers all the different operating regimes of the MOS-HEMT devices. The model is e
Autor:
Erfan Kadivar, Masoud Abdollahi
Publikováno v:
Journal of Electronic Materials.
MoO $$_3$$ /In/Cu/In/MoO $$_3$$ thin film has been deposited on glass substrate by a thermal evaporation method. To identify the optimal structure with the highest figure of merit, we investigated the effect of the MoO $$_3$$ , Cu, and In thicknesses