Zobrazeno 1 - 7
of 7
pro vyhledávání: '"91"'
Autor:
Hao, Z.1 hao@istec.or.jp, Wu, Y.1, Enomoto, Y. enomoto@istec.or.jp, Tanabe, K.1, Koshizuka, N.1
Publikováno v:
Journal of Crystal Growth. Feb2002, Vol. 235 Issue 1-4, p253. 5p.
Autor:
Jong Yeog Son, W.J. Maeng
Publikováno v:
Journal of Crystal Growth. 363:105-108
Epitaxial (001) BiFeO 3 thin films with tetragonally stained structures and a c / a ratio of about 1.04 were fabricated on single crystalline (100) Rh substrates. The BiFeO 3 thin film showed high remanent polarization ( P r ) of about 91 μC/cm 2 .
Publikováno v:
Journal of Crystal Growth. 235:253-257
Extremely smooth single crystal YBa 2 Cu 3 O 7− δ “thin” films, 1–3 μm thick, have been successfully grown on YBCO-seeded MgO substrates by liquid phase epitaxy. The morphology study on the as-grown samples has revealed a step-flow growth m
Autor:
Naoki Kobayashi, Makoto Kasu
Publikováno v:
Journal of Crystal Growth. 221:739-742
Electron field emission (FE) from high-quality AlN grown by metalorganic vapor-phase epitaxy is studied. The full-widths at half-maximum of the X-ray rocking curve of undoped and heavily Si-doped (Si density: 2.5×1020 cm−3) high-quality AlN were a
Publikováno v:
Tappura, K, Hakkarainen, T, Rakennus, K, Hovinen, M & Asonen, H 1991, ' The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy ', Journal of Crystal Growth, vol. 112, no. 1, pp. 27-32 . https://doi.org/10.1016/0022-0248(91)90908-N
We have studied the effect of growth temperature and growth rate on the composition of GaInAsP grown by gas-source molecular beam epitaxy on InP substrates. The composition of GaInAsP was found to be independent of substrate temperature below a trans
Publikováno v:
Journal of Crystal Growth. 127:1088-1090
For the preparation of epitaxial SmBa2Cu3O7−δ thin films, an in situ and non-reactive MBE process has been developed. Our special design of the MBE system considers the necessity of a high oxygen partial pressure at the substrate position during t
Publikováno v:
Tappura, K, Salokatve, A, Rakennus, K, Asonen, H & Pessa, M 1991, ' The substrate-epitaxial interface of GaAs and InP grown by GSMBE ', Journal of Crystal Growth, vol. 107, no. 1-4, pp. 1070-1071 . https://doi.org/10.1016/0022-0248(91)90614-B