Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Martin Albrecht"'
Publikováno v:
Journal of Crystal Growth. 203:570-581
The growth of thin epitaxial CaSi 2 films with reactive deposition epitaxy (RDE) on different crystalline silicon surfaces is described. The structure and crystalline quality are studied using transmission and scanning electron microscopy as well as
Autor:
E. Bauser, Martin Albrecht, Ralf B. Bergmann, P.O. Hansson, Anders Gustafsson, Horst P. Strunk
Publikováno v:
Journal of Crystal Growth. 121:790-794
We present a method for non-pseudomorphic growth of high quality Ge x Si 1− x on thermally oxidized Si (111) substrates. Liquid phase epitaxy is utilized for the Ge x Si 1− x ( x = 0.90) deposition, which starts in oxide-free seeding windows and