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Publikováno v:
Tappura, K, Hakkarainen, T, Rakennus, K, Hovinen, M & Asonen, H 1991, ' The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy ', Journal of Crystal Growth, vol. 112, no. 1, pp. 27-32 . https://doi.org/10.1016/0022-0248(91)90908-N
We have studied the effect of growth temperature and growth rate on the composition of GaInAsP grown by gas-source molecular beam epitaxy on InP substrates. The composition of GaInAsP was found to be independent of substrate temperature below a trans