Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hua Zhang"'
Publikováno v:
Journal of Crystal Growth. 416:12-16
We report optical properties and bonding behavior of nitrogen in InSbN alloys grown by metal-organic chemical vapor deposition (MOCVD) on InSb substrates in different conditions. Energy bandgap reduction is demonstrated in the alloys and the reduced
Publikováno v:
Journal of Crystal Growth. 362:197-201
We report the behavior of nitrogen implanted into GaAs wafer upon annealing in the range of 500 °C to 1000 °C. The SIMS results show out-diffusion of nitrogen and the peaks in the distribution profiles of implanted nitrogen broadening. XPS measurem
Publikováno v:
Journal of Crystal Growth. 318:356-359
High quality InSb epilayers were grown epitaxially on InSb (1 0 0) by metalorganic chemical vapor deposition. Different growth temperatures and V/III ratios were employed in the growth and their effects on the quality of the grown films were studied.
Autor:
Tak Keung Ng, W.K. Cheah, Soon Fatt Yoon, Rong Liu, Andrew T. S. Wee, Tao Mei, Dao Hua Zhang, W.K. Loke, Weijun Fan
Publikováno v:
Journal of Crystal Growth. 275:440-447
The indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from
Publikováno v:
Journal of Crystal Growth. 210:458-462
We report the growth and characterization of GaInAsP films on GaAs substrates by solid source molecular beam epitaxy (SSMBE) using a valve phosphorous cracker cell at varied white phosphorous beam equivalent pressure (BEP). It is found that the GaInA
Publikováno v:
Journal of Crystal Growth. :1141-1145
We report the I-V characteristics as a function of temperature and infrared absorption of the p-doped In 0.15 Ga 0.85 As/Al 0.45 Ga 0.55 As multiple quantum well structures grown by molecular beam epitaxy. The dark current I d of the structure is fou
Publikováno v:
Journal of Crystal Growth. 197:89-94
We report the effects of arsenic beam equivalent pressure on lattice mismatch, electrical properties, surface roughness and morphology of InGaAsP grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells with cont
Autor:
Dao Hua Zhang, Cheng Li
Publikováno v:
Journal of Crystal Growth. 165:15-18
We report the correlation between As effusion cell temperature and residual CO vapor intensity, oval defect density, C acceptor concentration and electrical properties of GaAs layers grown by molecular beam epitaxy. The As cell is found to be one of
Publikováno v:
Journal of Crystal Growth. 148:35-40
We report a detailed investigation of the Be-doped layers grown at a high AsGa flux ratio as a function of hole concentration using room and low temperature photoluminescence (PL). It has been found that the change of PL spectra with doping differs f
Publikováno v:
Journal of Crystal Growth. 135:441-446
The effect of As/Ga flux ratio on the incorporation of Si as a dopant in GaAs grown by molecular beam epitaxy (MBE) has been investigated by means of reflection high-energy electron diffraction (RHEED), scanning force microscopy (SFM), scanning elect