Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jacob H"'
Autor:
John Simon, Malik Hassanaly, K. Udwary, Aaron J. Ptak, Jacob H. Leach, Heather Splawn, Kevin L. Schulte, Hariswaran Sitaraman
Publikováno v:
Journal of Applied Physics. 130:115702
Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrati
Autor:
J. Liberis, Hadis Morkoç, Jacob H. Leach, Mingzhong Wu, E. Šermukšnis, Arvydas Matulionis, M. Ramonas
Publikováno v:
Journal of Applied Physics. 110:104504
A bottleneck for heat dissipation from the channel of a GaN-based heterostructure field-effect transistor is treated in terms of the lifetime of nonequilibrium (hot) longitudinal optical phonons, which are responsible for additional scattering of ele
Autor:
Hadis Morkoç, V. Avrutin, Mingzhong Wu, Jacob H. Leach, Emmanuel Rowe, Y.-Y. Song, Ümit Özgür, H. Y. Liu
Publikováno v:
Journal of Applied Physics. 108:064106
We report on the tuning of permittivity and permeability of a ferroelectric/ferromagnetic bilayer structure which can be used as a microwave phase shifter with two degrees of tuning freedom. The structure was prepared by the growth of a yttrium iron
Autor:
Hadis Morkoç, V. Avrutin, Jaydip Das, Young-Yeal Song, H. Y. Liu, C. E. Patton, Ümit Özgür, Jacob H. Leach, Bo Xiao
Publikováno v:
Journal of Applied Physics. 107:084511
Dielectric properties of annealed and as-grown ferroelectric Ba0.5Sr0.5TiO3 (BST) grown by pulsed laser deposition on sputtered BST seed layers on strontium titanate (STO) substrates were investigated at microwave frequencies in the realm of tunabili
Autor:
Lin Zhou, Xing Li, Igor Vurgaftman, Cagliyan Kurdak, Jerry R. Meyer, Hadis Morkoç, Ümit Özgür, David J. Smith, Xianfeng Ni, David A. Cullen, H. Cheng, Jacob H. Leach, Menghao Wu
Publikováno v:
Journal of Applied Physics. 107:083706
Due to growth temperature differences during deposition of GaN heterostructures utilizing InAlN barriers, an inadvertent parasitic GaN layer can form in the InAlN barrier layer. In structures utilizing AlN spacer layers, this parasitic layer acts as
Publikováno v:
Journal of Applied Physics. 107:014508
The microstructure of AuNiAlTi/Al0.84In0.16N/AlN/GaN Ohmic contacts annealed from 700 to 900 °C has been determined using transmission electron microscopy and associated analytical techniques. Intermixing and phase separation of the metal contact la
Autor:
Jacob H. Leach, J. Q. Xie, M. Ramonas, Hadis Morkoç, Mingzhong Wu, L. Ardaravičius, Arvydas Matulionis, J. Liberis, O. Kiprijanovic
Publikováno v:
Journal of Applied Physics. 106:073708
Hot-electron transport was probed by nanosecond-pulsed measurements for a nominally undoped two-dimensional channel confined in a nearly lattice-matched Al0.82In0.18N/AlN/GaN structure at room temperature. The electric field was applied parallel to t