Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Sun, Jin"'
Publikováno v:
Japanese Journal of Applied Physics. 47:6934-6937
AlxTi1-xOy (ATO) films were deposited by plasma enhanced atomic layer deposition (PEALD). In the deposition, it was possible to tailor the refractive index and the thickness of films by adjusting the number of cycles used for Al2O3 and TiO2 sublayers
Publikováno v:
Japanese Journal of Applied Physics. 46:738-743
VO2 thin films were successfully grown on sapphire and SiO2/Si substrates by the sol–gel process. The VO2 phase was well formed during simplified low pressure annealing in oxygen. The films prepared on sapphire directly crystallized to the VO2 phas
Autor:
Chang−Wook Han, Sun Jin Yun, In Jae Chung, Sang−Myeon Han, Jung Wook Lim, Joong−Hyun Park, Min-Koo Han, Ki Yong Kim
Publikováno v:
Japanese Journal of Applied Physics. 45:4365-4369
Hydrogenated microcrystalline silicon (µc-Si:H) film was fabricated by inductively coupled plasma–chemical vapor deposition (ICP–CVD) at 150 °C on ZrO2 gate dielectric which was made by atomic layer deposition (ALD) method. µc-Si:H film with v
Publikováno v:
Japanese Journal of Applied Physics. 47:3067-3069
VO2 films showing abrupt metal–insulator transition (MIT) were fabricated on amorphous-film-coated Si wafers by reactive RF-magnetron sputter deposition using a V-metal target, and postdeposition annealing. The amorphous films were thermally grown
Publikováno v:
Japanese Journal of Applied Physics. 47:3296-3298
We have fabricated crystalline nanowires of VO_2 using a new synthetic method. A nanowire synthesized at 650^oC shows the semiconducting behavior and a nanowire at 670^oC exhibits the first-order metal-insulator transition which is not the one-dimens
Autor:
Jung Wook Lim, Sun Jin Yun
Publikováno v:
Japanese Journal of Applied Physics. 42:L663-L665
Aluminum oxinitride film fabricated by Plasma-enhanced atomic layer deposition (PEALD) was found to possess a large breakdown field, which is necessary for the stable operation of thin film electroluminescent (TFEL) devices. Moreover, aluminum oxinit
Publikováno v:
Japanese Journal of Applied Physics. 42:L520-L522
A dc thin-film electroluminescent (TFEL) device has been fabricated to achieve low voltage operation and high-luminance blue emission. The device is based on an [Al/ZnS/luminescent CaS:Pb/indium-tin-oxide] structure in which electrons can be injected
Autor:
Hyung Soo Kim, Seong Eui Lee, Min A Park, Se Yong Park, Sun Jin Yun, Hee Chul Lee, Jung Wook Lim
Publikováno v:
Japanese Journal of Applied Physics. 52:10MB17
In this study, we report that the metal Cu deposited on a glass substrate is formed into a stable p-type Cu2O film with excellent properties through rapid thermal oxidation (RTO). The pre-deposited Cu film layer went through thermal oxidation in the
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Publikováno v:
Japanese Journal of Applied Physics. 51:106201
The TiO2 etching characteristics and mechanism in HBr/Cl2/Ar inductively coupled plasma (with a fixed bias power of 200 W) were investigated. It was found that the TiO2 etching rate in Cl2/Ar plasma is about 8 times faster than that in HBr/Ar plasma.