Zobrazeno 91 - 100
of 178
pro vyhledávání: '"Komuro, A."'
Autor:
Teppei Yamada, Yusa Muroya, Shinichi Yamashita, Yoshitaka Komuro, Daisuke Kawana, Akiyoshi Yamazaki, Takahiro Kozawa
Publikováno v:
Japanese Journal of Applied Physics; 9/1/2019, Vol. 58 Issue 9, p1-1, 1p
Autor:
Utsumi, Yoshiyuki, Irie, Makiko, Komuro, Yoshitaka, Matsuzawa, Kensuke, Hada, Hideo, Haga, Takashi, Ogawa, Satoshi
Publikováno v:
Japanese Journal of Applied Physics; June 2010, Vol. 49 Issue: 6 p06GF03-06GF05, 3p
Publikováno v:
Japanese Journal of Applied Physics. 27:L2105
Fe/Co multilayer films with various Fe layer and Co layer thicknesses ( dFe, dCo) were deposited by an rf magnetron sputtering method. The bcc single phase was obtained for films with smaller thicknesses of Co than 2 nm. A mixture of bcc and hcp phas
Publikováno v:
Japanese Journal of Applied Physics. 28:L2119
A high-electrical-resistance region as high as 1×104 Ω·cm can be formed in Si-doped InP (n=1×1018 cm-3) layers by 8×1014 cm-2 Ga focused ion beam (FIB) implantation and 500–600°C annealing. The clear photoresponse is also observed in the Ga-F
Autor:
Masanori Komuro
Publikováno v:
Japanese Journal of Applied Physics. 25:1500
The enrichment of the Si concentration on the needle surface of a liquid Au60Si40 (in at%) alloy ion source proceedes up to 80 at% during ion emission, resulting in fatting at the top region of the needle. The temperature dependences of the compositi
Publikováno v:
Japanese Journal of Applied Physics. 27:L34
A laser sputtering technique using visible light from a Q-switched YAG laser is proven to be of use for high-T c Y-Ba-Cu-O superconducting film fabrication. The obtained films reveal onset T c of 98 K and offset T c of 90 K, which are very similar to
Publikováno v:
Japanese Journal of Applied Physics. 26:L84
Thin 200-nm-thick Si crystals were grown in Si layers amorphized with 800-keV As2+ ions by inducing lateral solid-phase epitaxy at 500°C with a 140-keV Si2+ psuedo-linear ion beam formed by scanning a point-focused beam at 5 kHz. It is shown that re
Autor:
Tsunenori Sakamoto, Masanori Komuro
Publikováno v:
Japanese Journal of Applied Physics. 22:L760
Low-energy implantation doping techniques in Si-MBE using a liquid metal ion source of Ga are reported. Ga ions accelerated up to 500 V or 1000 V are projected onto the MBE layer during film growths, where substrate temperatures range from 550°C to
Publikováno v:
Japanese Journal of Applied Physics. 28:2090
The microlithographic behavior of inorganic resists for focused ion beam (FIB) has been studied for thin amorphous films of WO3, MoO3, V2O5, a mixture thereof and Ta2O5 using 20∼70 keV Ga+ FIB. The exposure characteristics, composition at the film
Autor:
Yuzoo Kozono, Yoshiaki Yazawa, Masanobu Hanazono, Toshiyuki Ohno, Shinpei Matsuda, Matahiro Komuro, Yutaka Sugita
Publikováno v:
Japanese Journal of Applied Physics. 26:L1907
Y-Ba-Cu-O thin films were prepared by an RF magnetron sputtering technique. When annealed at temperatures between 920°C and 1000°C the crystal structures of these films are orthorhombic, while when annealed at 1010°C the structures are tetragonal.