Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Komuro, A."'
Autor:
Satoshi Haraichi, Masanori Komuro
Publikováno v:
Japanese Journal of Applied Physics. 32:6168
The characteristics of ion-beam-assisted etching (IBAE) of Si with Cl2 have been investigated using a broad-pulsed Ga ion beam, with several parameters such as Cl2 gas flux, ion beam dwell time, sample temperature, and beam diameter. A simple adsorpt
Publikováno v:
Japanese Journal of Applied Physics. 31:4492
Focusing characteristics of an ion beam from a He field ion source were investigated. For a W emitter as installed, a beam with an ion current of 0.7 pA was focused into 0.2 µm because the angular current density did not exceed 0.02 µA/sr. Improvem
Autor:
Nobuyoshi Koshida, Nobufumi Atoda, Kinju Endo, Kazuyoshi Yoshida, Masanori Komuro, Shinichi Watanuki
Publikováno v:
Japanese Journal of Applied Physics. 31:4483
Nanometer-width refractory metal lines are generated on Si substrates with high resolution by focused ion beam (FIB) exposure to MoO3 and WO3 inorganic resists, development and subsequent reduction in dry H2 gas. On the basis of some experiments for
Publikováno v:
Japanese Journal of Applied Physics. 30:3246
Ultrafine patterning of refractory metals has been studied by the use of focused ion beam (FIB) and oxide resists. Thin amorphous films of MoO3 and WO3 were deposited by electron beam evaporation onto Si wafers, and were exposed to a 50 keV Ga+ FIB.
Publikováno v:
Japanese Journal of Applied Physics. 29:2288
Etch yield (the number of removed atoms per ion) of Si by showered Ga ion-beam-assisted etching with Cl2 has been measured as functions of gas molecule flux impinged on the sample surface and incident ion flux. It is shown that these results are in g
Publikováno v:
Japanese Journal of Applied Physics. 29:2299
It is demonstrated that 100-nm-width line patterns of refractory metals can be formed on Si substrates by a maskless process based on the combination of a focused ion beam (FIB) and high-contrast oxide resists. Thin amorphous films of MoO3 were depos
Publikováno v:
Japanese Journal of Applied Physics. 26:L84
Thin 200-nm-thick Si crystals were grown in Si layers amorphized with 800-keV As2+ ions by inducing lateral solid-phase epitaxy at 500°C with a 140-keV Si2+ psuedo-linear ion beam formed by scanning a point-focused beam at 5 kHz. It is shown that re