Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Komuro, A."'
Autor:
Iwao Miyamoto, Shinho Kim, Hideo Namatsu, Masanori Komuro, Jun Taniguchi, N. Yamazaki, Yuichi Kurashima, Hiroshi Hiroshima, Shinji Matsui
Publikováno v:
Japanese Journal of Applied Physics. 43:4045
We attempted to fabricate patterns having low line edge roughness (LER) by photo-nanoimprint for evaluation of critical dimension (CD) atomic-force microscopy (AFM). In order to fabricate the transparent low LER mold, we used spin on glass (SOG) impr
Autor:
Hiroshi Hiroshima, Sucheta Gorwadkar, Toshimi Wada, Kenichi Ishii, Masanori Komuro, Satoshi Haraichi
Publikováno v:
Japanese Journal of Applied Physics. 35:6673
We have developed an SiO2/c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously developed SiO2/poly-Si resist system. The process parameters which include the electron beam exposure conditions, thic
Autor:
Ken\\'ichi Ishii, Hiroshi Hiroshima, Masanori Komuro, Motoki Hirayama, Satoshi Haraichi, Toshimi Wada
Publikováno v:
Japanese Journal of Applied Physics. 34:6961
We have developed an SiO2/poly-Si multilayered electron beam resist process in order to overcome the resolution limit in conventional polymer electron beam resists and to form suspended masks for ultrasmall metal-insulator-metal tunnel junction fabri
Publikováno v:
Japanese Journal of Applied Physics. 33:7053
Observation of surface change with etching reaction for the Si(111)/XeF2 system has been demonstrated using second-harmonic generation (SHG). Both of the p-polarized and the s-polarized SHG outputs decay quickly with the spontaneous etching because o
Autor:
Satoshi Haraichi, Masanori Komuro
Publikováno v:
Japanese Journal of Applied Physics. 32:6168
The characteristics of ion-beam-assisted etching (IBAE) of Si with Cl2 have been investigated using a broad-pulsed Ga ion beam, with several parameters such as Cl2 gas flux, ion beam dwell time, sample temperature, and beam diameter. A simple adsorpt
Autor:
Hiroshi Hiroshima, Masanori Komuro
Publikováno v:
Japanese Journal of Applied Physics. 32:6153
Characteristics of thermally grown SiO2, which is a candidate for high-resolution electron beam resists, are studied. In order to improve the selectivity (the etch rate ratio of electron-irradiated area to unirradiated area) which defines the profile
Publikováno v:
Japanese Journal of Applied Physics. 30:3164
A new compact ECR plasma source has been developed. The characteristics of this source and it's applications are discussed. Irradiation by oxygen radicals O* for the oxidation during deposition process was found to produce high quality superconductin
Publikováno v:
Japanese Journal of Applied Physics. 29:2288
Etch yield (the number of removed atoms per ion) of Si by showered Ga ion-beam-assisted etching with Cl2 has been measured as functions of gas molecule flux impinged on the sample surface and incident ion flux. It is shown that these results are in g