Zobrazeno 1 - 10
of 16
pro vyhledávání: '"J. Lam"'
Autor:
Zhihong Mai, J. Lam, H.P. Ng, Siong Luong Ting, C.Q. Chen, Angela Teo, G.B. Ang, P.T. Ng, Francis Rivai
Publikováno v:
International Symposium for Testing and Failure Analysis.
As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected
Autor:
G.B. Ang, H.P. Ng, P.C. Ang, J. Lam, Francis Rivai, C. Q. Chen, Alfred Quah, Zhihong Mai, P.T. Ng
Publikováno v:
International Symposium for Testing and Failure Analysis.
As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected
Autor:
K.H. Yip, SeungJe Moon, Zhihong Mai, P.T. Ng, H.P. Ng, D. Nagalingam, G.B. Ang, C. Q. Chen, Alfred Quah, Angela Teo, J. Lam
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper describes the debug and analysis process of a challenging case study from wafer foundry which involved a circular patch functional leakage failure that was induced from device parametric drift due to thicker gate oxide with no detection si
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper explains how the authors used nanoprobing techniques and electrical characterization to trace a die failure to a problem with the photoresist used to mask the wafer for ion implantation. Nanoprobing and leakage current measurements reveale
Publikováno v:
International Symposium for Testing and Failure Analysis.
As the technology keeps scaling down and IC design becomes more and more complex, failure analysis becomes much more challenging, especially for static fault isolation. For semiconductor foundry FA, it will become even more challenging due to lack of
Autor:
J. Lam, Pik Kee Tan, M.K. Dawood, H. H. Yap, S. James, Zhihong Mai, P.S. Limin, C. Q. Chen, Hao Tan, G.R. Low
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this work, we present two case studies on the utilization of advanced nanoprobing on 20nm logic devices at contact layer to identify the root cause of scan logic failures. In both cases, conventional failure analysis followed by inspection of pass
Autor:
Z.H. Mai, C.Q. Chen, Y.M. Huang, A.Y. Du, G.R. Low, P.K. Tan, M.K. Dawood, Y. Zhou, H. Tan, H.H. Yap, J. Lam, H. Feng, Y.Z. Zhao, D.D. Wang
Publikováno v:
International Symposium for Testing and Failure Analysis.
With continuous scaling of CMOS device dimensions, sample preparation for Transmission Electron Microscope (TEM) analysis becomes increasingly important and challenging as the required sample thickness is less than several tens of nanometers. This pa
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper describes the observation of photoemissions from saturated transistors along a connecting path with open defect in the logic array. By exploiting this characteristic phenomenon to distinguish open related issues, we described with 2 case s
Autor:
T.H. Ng, Y.Z. Zhao, H. Feng, J. Lam, Y.M. Huang, R. He, D.D. Wang, M.K. Dawood, H. H. Yap, P.K. Tan, H. Tan, Y. Zhou, G.R. Low, Z.H. Mai
Publikováno v:
International Symposium for Testing and Failure Analysis.
Top-down, layer-by-layer de-layering inspection with a mechanical polisher and serial cross-sectional Focused Ion Beam (XFIB) slicing are two common approaches for physical failure analysis (PFA). This paper uses XFIB to perform top-down, layer-by-la
Autor:
M.K. Dawood, J. Lam, T.H. Ng, H. H. Yap, G.R. Low, Z.H. Mai, D.D. Wang, Y.M. Huang, H. Feng, H. Tan, Y.Z. Zhao, P.K. Tan, R. He
Publikováno v:
Scopus-Elsevier
With the scaling of semiconductor devices to nanometer range, ensuring surface uniformity over a large area while performing top down physical delayering has become a greater challenge. In this paper, the application of laser deprocessing technique (