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Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 23:340-343
Beyond the 45-nm technology node, nonmelt laser thermal annealing (LTA) is a potential candidate to replace the spike rapid thermal annealing (RTA) for the formation of ultrashallow and highly activated source/drain extension junctions. However, one
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing; May2010, Vol. 23 Issue 2, p340-343, 4p