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Autor:
Hong Hocheng, Yun-Liang Huang
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 20:306-312
Chemical-mechanical polishing (CMP) has been recognized indispensable to achieve the global planarity in removal of metal overlay across the wafer, when the number of interconnecting metal layers and the size of wafer increase and the line rule reduc
Autor:
Yun-Liang Huang, Hong Hocheng
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 17:180-187
As the number of metal levels and the wafer size increase, the global planarity and effective removal of metal overlay across the wafer becomes more crucial. Chemical-mechanical polishing (CMP) has been recognized essential to achieve this goal. Accu
Autor:
Hong Hocheng1 Hocheng@pme.nthu.edu.tw, Yun-Liang Huang1 YLHuang@pme.nthu.edu.tw
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. May2004, Vol. 17 Issue 2, p180-187. 8p.