Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Chen, Huang"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:1014-1018
Publikováno v:
IEEE Transactions on Electron Devices. 69:6552-6560
Autor:
Pei-Yu Wu, Xin-Ying Tsai, Ting-Chang Chang, Yu-Hsuan Yeh, Wei-Chen Huang, Kai-Chun Chang, Tsung-Ming Tsai, Jen-Wei Huang
Publikováno v:
IEEE Transactions on Electron Devices. 69:4218-4223
Autor:
Wei-Chen Huang, Po-Hsun Chen, Ting-Chang Chang, Hao-Xuan Zheng, Yu-Hsuan Yeh, Chung-Wei Wu, Yung-Fang Tan, Shih-Kai Lin, Pei-Yu Wu, Simon. M. Sze
Publikováno v:
IEEE Transactions on Electron Devices. 69:1811-1815
Autor:
Chenhsin Lien, Ting-Chang Chang, Pei-Yu Wu, Chun-Chu Lin, Chih-Cheng Yang, Wei-Chen Huang, Yung-Fang Tan, Shih-Kai Lin, Simon M. Sze, Wen-Chung Chen, Yong-Ci Zhang, Cheng-Hsien Wu, Li-Chuan Sun
Publikováno v:
IEEE Transactions on Electron Devices. 68:1037-1040
This study investigates an improvement in memory characteristics through depositing an In2O3 layer as an oxygen ion reservoir in the switching layer (SL) of resistive random access memory (RRAM). The deposition of In2O3, denoted as Pt/HfO2/In2O3/TiN
Publikováno v:
IEEE Transactions on Electron Devices. 67:3761-3766
This study addressed the characteristics of electrolyte–insulator–semiconductor (EIS) pH sensors with array wells and sensing membrane stacks of 3-aminopropyltriethoxysilane (APTES)/SiO2. The arrays of square wells were fabricated by nanoimprint
Publikováno v:
IEEE Transactions on Electron Devices. 67:1498-1505
An analytical model for the precise stress estimation of device channels is developed and demonstrated in this article. The resultant stress magnitude under considered stress resources, including strained source/drain (S/D) and intrinsic stressed sha
Autor:
Yu-Ting Su, Ting-Chang Chang, Wei-Chen Huang, Yung-Fang Tan, Yue Hao, Wen-Chung Chen, Min-Chen Chen, Pei-Yu Wu, Simon M. Sze, Hao-Xuan Zheng, Xiaohua Ma, You-Lin Xu, Yong-Ci Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 66:4706-4709
This article explains the difference in the reset processes between single RRAM and 1T1R RRAM structures. In the single RRAM, as the reset voltage increases, the off-state resistance increases. This is a normal RRAM operation. However, in the 1T1R st
Autor:
Chih-Yang Lin, Xiaohua Ma, Po-Hsun Chen, Yue Hao, Ting-Chang Chang, Wen-Chung Chen, Min-Chen Chen, Wei-Chen Huang, Simon M. Sze, C.S. Chen, Tsung-Ming Tsai, Hui-Chun Huang, Hao-Xuan Zheng, Chun-Chu Lin
Publikováno v:
IEEE Transactions on Electron Devices. 66:2595-2599
This paper investigates material modifications induced by cosputtering indium-tin oxide (ITO) with gadolinium (Gd) at two different power levels. In addition, resistance switching (RS) properties were also verified for use as an insulator in resistiv
Autor:
Chang-Chun Lee, Pei-Chen Huang
Publikováno v:
IEEE Transactions on Electron Devices. 65:4975-4981
The stress distributions and induced mobility gain in germanium (Ge)-based p-type MOSFETs (pMOSFETs) with an extended channel width are estimated in this paper. Several tin (Sn) concentrations of group-IV semiconductor GeSn alloys integrated with a c