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Published in:
IEEE Photonics Technology Letters. 32:1135-1138
We have demonstrated a monolithic semiconductor passively mode-locked Bragg waveguide laser (PMBRL) based on a two quantum well active region. The lasers showed a threshold current of ~33 mA at a saturable absorber reverse bias of 0 V in continuous w
Author/Creator:
Kort Wiersma, Jie Zong, Masoud Mollaee, Xiushan Zhu, Arturo Chavez-Pirson, Nasser Peyghambarian, Robert A. Norwood
Published in:
IEEE Photonics Technology Letters. 30:1563-1566
All-fiber single-transverse-mode laser oscillators operating at 785 nm were demonstrated by splicing a 0.1 mol% Tm 3+ -doped fluoride fiber with a core diameter of 4 μm and a numerical aperture of 0.07 to a pair of silica fiber Bragg gratings. About
Published in:
IEEE Photonics Technology Letters. 31:1120-1123
A compact, micro integrated, diode laser-based dual-wavelength master oscillator power amplifier at 785 nm is presented. Laser emission from a Y-branch distributed Bragg reflector laser is coupled into a tilted ridge waveguide amplifier on a $5\times
Published in:
IEEE Photonics Technology Letters. 26:1120-1123
A dual-wavelength master oscillator (MO) power amplifier (PA) diode-laser system emitting at 785 nm suitable for shifted excitation Raman difference spectroscopy is presented. The laser system consists of a distributed Bragg reflector V-branch diode
Published in:
IEEE Photonics Technology Letters. 22:1147-1149
Micrometer-sized hollow antiresonant reflecting optical waveguides on silicon substrates have been previously demonstrated with liquid and gas-filled cores. Previous designs have nonideal geometries, with nonuniform lateral layers around the hollow c
Author/Creator:
Ingrid Jonak-Auer, A. Marchlewski, Ewald Wachmann, Wolfgang Gaberl, Horst Zimmermann, Gerald Meinhardt
Published in:
IEEE Photonics Technology Letters. 21:1656-1658
Finger photodiodes in PIN technology are introduced to enhance the responsivity for blue and ultraviolet light. A thick low doped epitaxial layer results in high responsivity and high bandwidth also for red and near-infrared light. Results of PIN fin
Author/Creator:
George J. Simonis, Michael R. Stead, Richard P. Leavitt, J. T. Pham, F. Towner, N. Gupta
Published in:
IEEE Photonics Technology Letters. 5:689-692
A GaAs/AlGaAs-superlattice rib-waveguide optical modulator that was fabricated with a single mask and a self-aligned electrode is described. The modulators uses the Stark-ladder transitions in the 775-810-nm wavelength range. for which the GaAs subst