Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Raskin, P."'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 322-330 (2024)
Understanding and mitigation of substrate RF losses and signal distortion are critical to enable high-performance GaN-on-Si front-end-modules. While the origin of RF losses and consequently a decreased effective substrate resistivity $({\rho }_{eff})
Externí odkaz:
https://doaj.org/article/f03022e5913c448999ae5a41e212c744
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 650-657 (2023)
Advances in CMOS technology have enabled MOSFET with cutoff and maximum oscillation frequencies (ft and fmax) in the 400 GHz range, thus opening the path to CMOS-based applications at millimeter-wave (mm-wave) and sub-THz frequencies. Accurate compac
Externí odkaz:
https://doaj.org/article/617cd55939e5468097b07496546d68a5
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 620-626 (2022)
This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were perfo
Externí odkaz:
https://doaj.org/article/8bdd0f514f874ccfac535d801d7012c6
Autor:
Jean-Pierre Raskin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 424-434 (2022)
Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Today,
Externí odkaz:
https://doaj.org/article/99c1b3d9119747b7af16f337d3362e25
Akademický článek
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Autor:
Valeriya Kilchytska, Sergej Makovejev, Babak Kazemi Esfeh, Lucas Nyssens, Arka Halder, Jean-Pierre Raskin, Denis Flandre
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 500-510 (2021)
This review paper assesses the main approaches in the electrical characterization of advanced MOSFETs towards their future analog and RF applications. Those approaches are shown to be different from the traditionally used ones for the assessment of t
Externí odkaz:
https://doaj.org/article/cdb66ae5dc3c41f7ad244224734162ac
Autor:
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Denis Flandre, Valeriya Kilchytska, Jean-Pierre Raskin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 646-654 (2020)
This work presents a detailed RF characterization of 28-nm FD-SOI nMOSFETs at cryogenic temperatures down to 4.2 K. Two main RF Figures of Merit (FoMs), i.e., current-gain cutoff frequency (ft) and maximum oscillation frequency (fmax), as well as par
Externí odkaz:
https://doaj.org/article/604d5dc80ab54f939d62a7e5ef122832
Autor:
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 789-796 (2020)
This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed t
Externí odkaz:
https://doaj.org/article/0272cd05220a4e07b332e6db4491c173
Autor:
N. Andre, M. Rack, L. Nyssens, C. Gimeno, D. Oueslati, K. Ben Ali, S. Gilet, C. Craeye, J.-P. Raskin, D. Flandre
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 393-397 (2019)
In this paper, measurements and simulations of miniature monopole antennas for ultra-wideband (UWB) GHz intra- and inter-chips communication and biomedical applications are presented. Folded designs on four substrates are studied: 1) standard bulk; 2
Externí odkaz:
https://doaj.org/article/f687e44f115045ddbed7637c7b67b4aa
Autor:
Babak Kazemi Esfeh, Valeriya Kilchytska, N. Planes, M. Haond, Denis Flandre, Jean-Pierre Raskin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 810-816 (2019)
This paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency (fT) and maximum oscillation frequency (fmax), as well as element
Externí odkaz:
https://doaj.org/article/a3798bc68dbd4473a5fcf2c48760a450