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pro vyhledávání: '"Pierre Petroff"'
Publikováno v:
IEEE Journal of Quantum Electronics. 46:1127-1131
Electro-optic properties of self assembled InGaAs quantum posts have been studied experimentally. For TE polarization phase modulation enhancement up to 27% over devices containing InGaAs quantum well of the same average composition and thickness was
Autor:
R.W. Herrick, Pierre Petroff
Publikováno v:
IEEE Journal of Quantum Electronics. 34:1963-1969
The aging process is studied in proton-implanted 850-nm vertical-cavity surface-emitting lasers (VCSEL's). We find evidence for a novel failure mode, which does not involve the growth of defects or reduction in radiative efficiency. In the proposed f
Autor:
D.B. Young, Arthur C. Gossard, D. Leonard, M. S. Miller, S. Y. Hu, Nadir Dagli, Pierre Petroff, Larry A. Coldren, Jong Chang Yi
Publikováno v:
IEEE Journal of Quantum Electronics. 31:1380-1388
We report characterization and modeling of serpentine superlattice nanowire-array lasers. These samples were grown by molecular beam epitaxy on (100) n/sup +/-GaAs vicinal substrates. In-plane ridge-waveguide lasers with ridge stripes either parallel