Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Youguang Zhang"'
Autor:
Zhizhong Zhang, Jinyi Sun, Zhenyi Zheng, Kelian Lin, Kun Zhang, Jinkai Wang, Youguang Zhang, Weisheng Zhao, Yue Zhang
Publikováno v:
IEEE Electron Device Letters. 43:1567-1570
Autor:
Youguang Zhang, Shishen Yan, Yue Zhang, Wenlong Cai, Guanda Wang, Jiang Nan, Zhe Huang, Kaihua Cao, Kun Zhang, Weisheng Zhao, Jinkai Wang, Zhizhong Zhang, Zhenyi Zheng, Lei Chen
Publikováno v:
IEEE Electron Device Letters. 41:928-931
Low on/off ratio gravely hinders the application of magnetoresistance (MR) devices for the accurate and reliable data fetch. In this paper, a rectified tunnel MR (R-TMR) device is fabricated by integrating perpendicular-magnetic-anisotropy magnetic t
Autor:
Weisheng Zhao, Zhenyi Zheng, Yue Zhang, Zhizhong Zhang, Yuanzhi Zhu, Jiang Nan, Kun Zhang, Youguang Zhang
Publikováno v:
IEEE Electron Device Letters. 40:1984-1987
Compared with skyrmions in ferromagnetic (FM) materials, skyrmions in near-compensated ferrimagnetic (FIM) materials demonstrate higher motion velocity and negligible skyrmion Hall (Sky-Hall) angle. This provides a brighter prospect of skyrmions for
Autor:
Ming-Chang Yang, Youguang Zhang, Xing Chen, Erya Deng, Wang Kang, Na Lei, Haoyang Zhang, Weisheng Zhao
Publikováno v:
IEEE Electron Device Letters. 40:722-725
With the increase of the tunneling leakage current resulting from the downscaling of transistor size, cache memory based on semiconductor technologies, i.e., SRAM, is facing big challenges in keeping up with the famous Moore’s law. Nonvolatile memo
Autor:
Dafiné Ravelosona, Wang Kang, Youguang Zhang, Weisheng Zhao, Wenlong Cai, Erya Deng, Yu Zhang, Jianlei Yang
Publikováno v:
IEEE Electron Device Letters. 39:684-687
Resistively enhanced magnetic tunnel junction (Re-MTJ) nonvolatile memory devices with a heterogeneous structure of an MTJ surrounded by resistive filaments were investigated for the first time for multi-level cell memory applications. By independent